Please use this identifier to cite or link to this item: http://hdl.handle.net/10553/46929
Title: Temperature in HFETs when operating in DC
Authors: González, Benito 
Hernández, Antonio 
García, Javier 
Del Pino, F. Javier 
Sendra, José R. 
Nunez, Antonio 
UNESCO Clasification: 3307 Tecnología electrónica
Keywords: Field-Effect Transistors
Medium/High Temperatures
Algaas/Ingaas Hfets
Simulation
Heterostructures
Resistance
Transport
Issue Date: 2003
Journal: Proceedings of SPIE - The International Society for Optical Engineering 
Conference: Conference on VLSI Circuits and Systems 
Abstract: This work analyses the DC response of InGaAs channel Modulation Doped Field-Effect Transistors, when varying temperature from 300 to 400 K. An analytic model for the intrinsic drain current is derived from previous work, done for a similar AlGaAs channel device, in order to explicitly show the temperature dependence. The extrinsic resistances are numerically evaluated and added in a straightway form to the model. Experimental output characteristics at different temperatures of an InGaAs HFET in static operation are compared with those offered by the resulting extrinsic model and numerical simulations. Computed relative errors are around 10%.
URI: http://hdl.handle.net/10553/46929
ISBN: 0-8194-4977-6
ISSN: 0277-786X
DOI: 10.1117/12.501195
Source: Proceedings of SPIE - The International Society for Optical Engineering[ISSN 0277-786X],v. 5117, p. 527-532
Appears in Collections:Actas de congresos
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