Temperature in HFETs when operating in DC

Abstract

This work analyses the DC response of InGaAs channel Modulation Doped Field-Effect Transistors, when varying temperature from 300 to 400 K. An analytic model for the intrinsic drain current is derived from previous work, done for a similar AlGaAs channel device, in order to explicitly show the temperature dependence. The extrinsic resistances are numerically evaluated and added in a straightway form to the model. Experimental output characteristics at different temperatures of an InGaAs HFET in static operation are compared with those offered by the resulting extrinsic model and numerical simulations. Computed relative errors are around 10%.