DC modeling of PN integrated cross varactors

Título:	DC modeling of PN integrated cross varactors
Autores/as:	González, Benito Pérez, José Antonio Khemchandani, Sunil L. Goñi-Iturri, Amaya Pino, Javier Del García, Javier
Clasificación UNESCO:	3307 Tecnología electrónica
Palabras clave:	Mos Varactors Capacitance Diffusions Reverse modeling Capacitors, et al.
Fecha de publicación:	2005
Publicación seriada:	Proceedings of SPIE - The International Society for Optical Engineering
Conferencia:	Conference on VLSI Circuits and Systems II
Resumen:	In this paper models for the capacitance of cross integrated varactors based in the PN junction are presented. Three different approximations are assumed, in order to reproduce the measured results of the capacitance. The relative error with the measured capacitance is under 10% in all cases.
URI:	https://accedacris.ulpgc.es/handle/10553/46925
ISBN:	0-8194-5832-5
ISSN:	0277-786X
DOI:	10.1117/12.608279
Fuente:	Proceedings of SPIE - The International Society for Optical Engineering[ISSN 0277-786X],v. 5837 PART II (116), p. 1015-1022
Colección:	Actas de congresos

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