Please use this identifier to cite or link to this item: http://hdl.handle.net/10553/46925
Title: DC modeling of PN integrated cross varactors
Authors: González, Benito 
Pérez, José Antonio
Khemchandani, Sunil L. 
Goñi-Iturri, Amaya
Pino, Javier Del 
García, Javier 
UNESCO Clasification: 3307 Tecnología electrónica
Keywords: Mos Varactors
Capacitance
Diffusions
Reverse modeling
Capacitors
Semiconductors
Issue Date: 2005
Journal: Proceedings of SPIE - The International Society for Optical Engineering 
Conference: Conference on VLSI Circuits and Systems II 
Abstract: In this paper models for the capacitance of cross integrated varactors based in the PN junction are presented. Three different approximations are assumed, in order to reproduce the measured results of the capacitance. The relative error with the measured capacitance is under 10% in all cases.
URI: http://hdl.handle.net/10553/46925
ISBN: 0-8194-5832-5
ISSN: 0277-786X
DOI: 10.1117/12.608279
Source: Proceedings of SPIE - The International Society for Optical Engineering[ISSN 0277-786X],v. 5837 PART II (116), p. 1015-1022
Appears in Collections:Actas de congresos
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