Identificador persistente para citar o vincular este elemento:
http://hdl.handle.net/10553/70304
| Título: | Power amplifiers load modulation techniques for 5G in GaN-on-Si techonology | Autores/as: | Díez Acereda, Victoria You Diaz Carballo, Ayoze Rodríguez Hernández, Roberto Ginés Del Pino, J. Khemchandani, Sunil L. |
Clasificación UNESCO: | 3307 Tecnología electrónica 3325 Tecnología de las telecomunicaciones |
Palabras clave: | 5G Chireix Outphasing Pa Doherty Pa Gan Output Power Back-Off (Obo), et al. |
Fecha de publicación: | 2019 | Editor/a: | Institute of Electrical and Electronics Engineers (IEEE) | Proyectos: | Diseño de Amplificadores de Potencia Integrados de Nitruro de Galio Para Comunicaciones | Conferencia: | 34th Conference on Design of Circuits and Integrated Systems, DCIS 2019 | Resumen: | A Doherty power amplifier (DPA) and a Chireix power amplifier for 5th Generation (5G) wireless applications are presented in this paper. The power amplifiers are integrated in OMMIC 100 nm GaN-on-Si process. In both amplifiers, the λ/4 T-Line are replaced with lumped-elements to reduce its area. The DPA presents a Psat of 34 dBm (>2.5 W), a peak PAE of 41 % and a 9.4 dB gain at 3.6 GHz. At 7 dB output back-off (OBO) it exhibits a 34.2 % PAE. On the other hand, the Chireix outphasing PA provides a Psat of 32 dBm (>1.5 W), a peak PAE of 54.9%, a gain of 10.4 dB and a 25 % PAE at 7 dB OBO. The occupied area of the DPA and Chireix amplifiers are 3.26 mm2and 3.2 mm2, respectively, including pads. | URI: | http://hdl.handle.net/10553/70304 | ISBN: | 978-1-7281-5458-9 | DOI: | 10.1109/DCIS201949030.2019.8959923 | Fuente: | 2019 XXXIV Conference on Design of Circuits and Integrated Systems (DCIS), Bilbao, Spain, 2019 |
| Colección: | Actas de congresos |
Los elementos en ULPGC accedaCRIS están protegidos por derechos de autor con todos los derechos reservados, a menos que se indique lo contrario.