Please use this identifier to cite or link to this item: http://hdl.handle.net/10553/70304
Title: Power Amplifiers Load Modulation Techniques for 5G in GaN-on-Si Techonology
Authors: Diez-Acereda, V.
Diaz-Carballo, A.
Rodriguez-Hernandez, R.
Del Pino, J. 
Khemchandani, Sunil L. 
UNESCO Clasification: 3307 Tecnología electrónica
3325 Tecnología de las telecomunicaciones
Keywords: 5G
Chireix Outphasing Pa
Doherty Pa
Gan
Output Power Back-Off (Obo)
Power Added Efficiency (Pae)
Issue Date: 2019
Journal: 2019 34Th Conference On Design Of Circuits And Integrated Systems, Dcis 2019
Abstract: A Doherty power amplifier (DPA) and a Chireix power amplifier for 5th Generation (5G) wireless applications are presented in this paper. The power amplifiers are integrated in OMMIC 100 nm GaN-on-Si process. In both amplifiers, the λ/4 T-Line are replaced with lumped-elements to reduce its area. The DPA presents a Psat of 34 dBm (>2.5 W), a peak PAE of 41 % and a 9.4 dB gain at 3.6 GHz. At 7 dB output back-off (OBO) it exhibits a 34.2 % PAE. On the other hand, the Chireix outphasing PA provides a Psat of 32 dBm (>1.5 W), a peak PAE of 54.9%, a gain of 10.4 dB and a 25 % PAE at 7 dB OBO. The occupied area of the DPA and Chireix amplifiers are 3.26 mm2and 3.2 mm2, respectively, including pads.
URI: http://hdl.handle.net/10553/70304
ISBN: 9781728154589
DOI: 10.1109/DCIS201949030.2019.8959923
Source: 2019 XXXIV Conference on Design of Circuits and Integrated Systems (DCIS), Bilbao, Spain, 2019, pp. 1-5.
Appears in Collections:Actas de congresos
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