Please use this identifier to cite or link to this item:
Title: Power amplifiers load modulation techniques for 5G in GaN-on-Si techonology
Authors: Diez-Acereda, V.
Diaz-Carballo, A.
Rodriguez-Hernandez, R.
Del Pino, J. 
Khemchandani, Sunil L. 
UNESCO Clasification: 3307 Tecnología electrónica
3325 Tecnología de las telecomunicaciones
Keywords: 5G
Chireix Outphasing Pa
Doherty Pa
Output Power Back-Off (Obo)
Power Added Efficiency (Pae)
Issue Date: 2019
Journal: 2019 34Th Conference On Design Of Circuits And Integrated Systems, Dcis 2019
Conference: 34th Conference on Design of Circuits and Integrated Systems, DCIS 2019 
Abstract: A Doherty power amplifier (DPA) and a Chireix power amplifier for 5th Generation (5G) wireless applications are presented in this paper. The power amplifiers are integrated in OMMIC 100 nm GaN-on-Si process. In both amplifiers, the λ/4 T-Line are replaced with lumped-elements to reduce its area. The DPA presents a Psat of 34 dBm (>2.5 W), a peak PAE of 41 % and a 9.4 dB gain at 3.6 GHz. At 7 dB output back-off (OBO) it exhibits a 34.2 % PAE. On the other hand, the Chireix outphasing PA provides a Psat of 32 dBm (>1.5 W), a peak PAE of 54.9%, a gain of 10.4 dB and a 25 % PAE at 7 dB OBO. The occupied area of the DPA and Chireix amplifiers are 3.26 mm2and 3.2 mm2, respectively, including pads.
ISBN: 9781728154589
DOI: 10.1109/DCIS201949030.2019.8959923
Source: 2019 XXXIV Conference on Design of Circuits and Integrated Systems (DCIS), Bilbao, Spain, 2019, pp. 1-5.
Appears in Collections:Actas de congresos
Show full item record

Page view(s)

checked on Aug 8, 2020

Google ScholarTM




Export metadata

Items in accedaCRIS are protected by copyright, with all rights reserved, unless otherwise indicated.