|Title:||Power amplifiers load modulation techniques for 5G in GaN-on-Si techonology||Authors:||Diez-Acereda, V.
Del Pino, J.
Khemchandani, Sunil L.
|UNESCO Clasification:||3307 Tecnología electrónica
3325 Tecnología de las telecomunicaciones
Chireix Outphasing Pa
Output Power Back-Off (Obo)
Power Added Efficiency (Pae)
|Issue Date:||2019||Journal:||2019 34Th Conference On Design Of Circuits And Integrated Systems, Dcis 2019||Conference:||34th Conference on Design of Circuits and Integrated Systems, DCIS 2019||Abstract:||A Doherty power amplifier (DPA) and a Chireix power amplifier for 5th Generation (5G) wireless applications are presented in this paper. The power amplifiers are integrated in OMMIC 100 nm GaN-on-Si process. In both amplifiers, the λ/4 T-Line are replaced with lumped-elements to reduce its area. The DPA presents a Psat of 34 dBm (>2.5 W), a peak PAE of 41 % and a 9.4 dB gain at 3.6 GHz. At 7 dB output back-off (OBO) it exhibits a 34.2 % PAE. On the other hand, the Chireix outphasing PA provides a Psat of 32 dBm (>1.5 W), a peak PAE of 54.9%, a gain of 10.4 dB and a 25 % PAE at 7 dB OBO. The occupied area of the DPA and Chireix amplifiers are 3.26 mm2and 3.2 mm2, respectively, including pads.||URI:||http://hdl.handle.net/10553/70304||ISBN:||9781728154589||DOI:||10.1109/DCIS201949030.2019.8959923||Source:||2019 XXXIV Conference on Design of Circuits and Integrated Systems (DCIS), Bilbao, Spain, 2019, pp. 1-5.|
|Appears in Collections:||Actas de congresos|
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