Identificador persistente para citar o vincular este elemento: http://hdl.handle.net/10553/46922
Título: Improved tolerance to operation temperature in δ-doped inverted HFETs
Autores/as: González, B. 
Hernández Ballester, Antonio 
Clasificación UNESCO: 3307 Tecnología electrónica
Palabras clave: Electron-Mobility Transistors
Field-Effect Transistors
Substrate-Temperature
Growth
Gaas
Fecha de publicación: 2007
Publicación seriada: Semiconductor Science and Technology 
Resumen: Inverted delta doping in HFETs offers the possibility of enhanced performance. It makes possible the development of very high frequency/speed and power transistor circuits. The operating temperature range and δ-doping concentration are critical, because they strongly affect the device ability to confine the current flow into the fast quantum well channel. In this study, the effect of temperature and δ-doping concentration on the performance of inverted HFETs is analysed by means of numerical simulations. The results are analytically and qualitatively discussed, showing how to fine-tune the δ-doping concentration from medium to high temperatures. Comparisons with a similar conventional HFET demonstrate a better tolerance to temperature variations in the inverted ones.
URI: http://hdl.handle.net/10553/46922
ISSN: 0268-1242
DOI: 10.1088/0268-1242/22/4/015
Fuente: Semiconductor Science and Technology [ISSN 0268-1242], v. 22 (4), p. 385-391
Colección:Artículos
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