Identificador persistente para citar o vincular este elemento: http://hdl.handle.net/10553/69276
Título: Temperature-Dependent Thermal Capacitance Characterization for SOI-MOSFETs
Autores/as: Gonzalez, Benito 
Aja, Beatriz
Artal, Eduardo
Lazaro, Antonio
Núñez Ordóñez, Antonio 
Clasificación UNESCO: 3307 Tecnología electrónica
Palabras clave: Heat-Transport
Resistance
Model
Fecha de publicación: 2019
Publicación seriada: IEEE Transactions on Electron Devices 
Resumen: Thermal capacitances are required to describe the fast dynamic thermal behavior in the silicon-on- insulator (SOI) devices. This article presents a physical model based on the ac technique, together with the characteristic thermal frequency determination through the frequency response of the output conductance, for calculating the thermal capacitance of single-finger and multi-finger SOI-MOSFETs. The model accounts for the total gate width and substrate temperature, making evident the augmented thermal coupling when multi- fingers are used. The thermal capacitances and the corresponding time constants, extracted from a variety of gate widths and number of fingers, are correctly predicted up to a substrate temperature of 150 degrees C.
URI: http://hdl.handle.net/10553/69276
ISSN: 0018-9383
DOI: 10.1109/TED.2019.2935500
Fuente: Ieee Transactions On Electron Devices[ISSN 0018-9383],v. 66 (10), p. 4120-4125
Colección:Artículos
Adobe PDF (1,2 MB)
Vista completa

Google ScholarTM

Verifica

Altmetric


Comparte



Exporta metadatos



Los elementos en ULPGC accedaCRIS están protegidos por derechos de autor con todos los derechos reservados, a menos que se indique lo contrario.