Please use this identifier to cite or link to this item: http://hdl.handle.net/10553/51590
Title: Optical study of InP etched in methane-based plasmas by reactive ion beam etching
Authors: Sendra, José Ramón 
Armelles, Gaspar
Anguita, José
Issue Date: 1996
Publisher: 0268-1242
Journal: Semiconductor Science and Technology 
URI: http://hdl.handle.net/10553/51590
ISSN: 0268-1242
DOI: 10.1088/0268-1242/11/2/016
Source: Semiconductor Science and Technology[ISSN 0268-1242],v. 11, p. 238-242
Appears in Collections:Artículos
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