Optical study of InP etched in methane-based plasmas by reactive ion beam etching

Please use this identifier to cite or link to this item: http://hdl.handle.net/10553/51590

DC Field	Value	Language
dc.contributor.author	Sendra, José Ramón
dc.contributor.author	Armelles, Gaspar
dc.contributor.author	Anguita, José
dc.date.accessioned	2018-11-25T01:59:02Z	-
dc.date.available	2018-11-25T01:59:02Z	-
dc.date.issued	1996
dc.identifier.issn	0268-1242
dc.identifier.uri	http://hdl.handle.net/10553/51590	-
dc.publisher	0268-1242
dc.relation.ispartof	Semiconductor Science and Technology
dc.source	Semiconductor Science and Technology[ISSN 0268-1242],v. 11, p. 238-242
dc.title	Optical study of InP etched in methane-based plasmas by reactive ion beam etching
dc.type	info:eu-repo/semantics/article	es
dc.type	Article	es
dc.identifier.doi	10.1088/0268-1242/11/2/016
dc.identifier.scopus	0030082121
dc.contributor.authorscopusid	7006497287
dc.contributor.authorscopusid	7004103072
dc.contributor.authorscopusid	57202568509
dc.description.lastpage	242
dc.description.firstpage	238
dc.relation.volume	11
dc.type2	Artículo	es
dc.identifier.ulpgc	Sí	es
dc.description.scie	SCIE
item.grantfulltext	none	-
item.fulltext	Sin texto completo	-
crisitem.author.dept	GIR IUMA: Equipos y Sistemas de Comunicación	-
crisitem.author.dept	IU de Microelectrónica Aplicada	-
crisitem.author.dept	Departamento de Ingeniería Electrónica y Automática	-
crisitem.author.orcid	0000-0001-5385-792X	-
crisitem.author.parentorg	IU de Microelectrónica Aplicada	-
crisitem.author.fullName	Sendra Sendra, José Ramón	-
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