Please use this identifier to cite or link to this item:
http://hdl.handle.net/10553/51590
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Sendra, José Ramón | |
dc.contributor.author | Armelles, Gaspar | |
dc.contributor.author | Anguita, José | |
dc.date.accessioned | 2018-11-25T01:59:02Z | - |
dc.date.available | 2018-11-25T01:59:02Z | - |
dc.date.issued | 1996 | |
dc.identifier.issn | 0268-1242 | |
dc.identifier.uri | http://hdl.handle.net/10553/51590 | - |
dc.publisher | 0268-1242 | |
dc.relation.ispartof | Semiconductor Science and Technology | |
dc.source | Semiconductor Science and Technology[ISSN 0268-1242],v. 11, p. 238-242 | |
dc.title | Optical study of InP etched in methane-based plasmas by reactive ion beam etching | |
dc.type | info:eu-repo/semantics/article | es |
dc.type | Article | es |
dc.identifier.doi | 10.1088/0268-1242/11/2/016 | |
dc.identifier.scopus | 0030082121 | |
dc.contributor.authorscopusid | 7006497287 | |
dc.contributor.authorscopusid | 7004103072 | |
dc.contributor.authorscopusid | 57202568509 | |
dc.description.lastpage | 242 | |
dc.description.firstpage | 238 | |
dc.relation.volume | 11 | |
dc.type2 | Artículo | es |
dc.identifier.ulpgc | Sí | es |
dc.description.scie | SCIE | |
item.grantfulltext | none | - |
item.fulltext | Sin texto completo | - |
crisitem.author.dept | GIR IUMA: Equipos y Sistemas de Comunicación | - |
crisitem.author.dept | IU de Microelectrónica Aplicada | - |
crisitem.author.dept | Departamento de Ingeniería Electrónica y Automática | - |
crisitem.author.orcid | 0000-0001-5385-792X | - |
crisitem.author.parentorg | IU de Microelectrónica Aplicada | - |
crisitem.author.fullName | Sendra Sendra, José Ramón | - |
Appears in Collections: | Artículos |
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