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Identificador persistente para citar o vincular este elemento: https://accedacris.ulpgc.es/handle/10553/51590
DC FieldValueLanguage
dc.contributor.authorSendra, José Ramón
dc.contributor.authorArmelles, Gaspar
dc.contributor.authorAnguita, José
dc.date.accessioned2018-11-25T01:59:02Z-
dc.date.available2018-11-25T01:59:02Z-
dc.date.issued1996
dc.identifier.issn0268-1242
dc.identifier.urihttps://accedacris.ulpgc.es/handle/10553/51590-
dc.publisher0268-1242
dc.relation.ispartofSemiconductor Science and Technology
dc.sourceSemiconductor Science and Technology[ISSN 0268-1242],v. 11, p. 238-242
dc.titleOptical study of InP etched in methane-based plasmas by reactive ion beam etching
dc.typeinfo:eu-repo/semantics/articlees
dc.typeArticlees
dc.identifier.doi10.1088/0268-1242/11/2/016
dc.identifier.scopus0030082121
dc.contributor.authorscopusid7006497287
dc.contributor.authorscopusid7004103072
dc.contributor.authorscopusid57202568509
dc.description.lastpage242
dc.description.firstpage238
dc.relation.volume11
dc.type2Artículoes
dc.identifier.ulpgcSíes
dc.description.scieSCIE
item.fulltextSin texto completo-
item.grantfulltextnone-
crisitem.author.deptDepartamento de Ingeniería Electrónica y Automática-
crisitem.author.orcid0000-0001-5385-792X-
crisitem.author.fullNameSendra Sendra, José Ramón-
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