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http://hdl.handle.net/10553/51590
| Title: | Optical study of InP etched in methane-based plasmas by reactive ion beam etching | Authors: | Sendra, José Ramón Armelles, Gaspar Anguita, José |
Issue Date: | 1996 | Publisher: | 0268-1242 | Journal: | Semiconductor Science and Technology | URI: | http://hdl.handle.net/10553/51590 | ISSN: | 0268-1242 | DOI: | 10.1088/0268-1242/11/2/016 | Source: | Semiconductor Science and Technology[ISSN 0268-1242],v. 11, p. 238-242 |
| Appears in Collections: | Artículos |
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