|Title:||Analytical models for PN cross varactors||Authors:||Pérez, J. A.
Del Pino, J.
Khemchandani, S. L.
Hernández Ballester, Antonio
|UNESCO Clasification:||3307 Tecnología electrónica||Keywords:||Mos Varactors
semiconductor device models
|Issue Date:||2005||Journal:||2005 Spanish Conference on Electron Devices, Proceedings||Conference:||5th Spanish Conference on Electron Devices||Abstract:||In this paper, models for the capacitance of cross integrated varactors based in the PN junction are presented. Three different approximations are assumed, in order to reproduce the measured results of the capacitance. The relative error with the measured capacitance is under 10% in all cases.||URI:||http://hdl.handle.net/10553/46926||ISBN:||0-7803-8810-0||DOI:||10.1109/SCED.2005.1504321||Source:||2005 Spanish Conference on Electron Devices, Proceedings,v. 2005 (1504321), p. 107-110|
|Appears in Collections:||Actas de congresos|
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