Please use this identifier to cite or link to this item: http://hdl.handle.net/10553/46926
Title: Analytical models for PN cross varactors
Authors: Pérez, J. A.
González, B. 
García, J. 
Del Pino, J. 
Khemchandani, S. L. 
Hernández, A. 
UNESCO Clasification: 3307 Tecnología electrónica
Keywords: Mos Varactors
semiconductor device models
capacitance measurement
p-n junctions
Issue Date: 2005
Journal: 2005 Spanish Conference on Electron Devices, Proceedings
Conference: 5th Spanish Conference on Electron Devices 
Abstract: In this paper, models for the capacitance of cross integrated varactors based in the PN junction are presented. Three different approximations are assumed, in order to reproduce the measured results of the capacitance. The relative error with the measured capacitance is under 10% in all cases.
URI: http://hdl.handle.net/10553/46926
ISBN: 0-7803-8810-0
DOI: 10.1109/SCED.2005.1504321
Source: 2005 Spanish Conference on Electron Devices, Proceedings,v. 2005 (1504321), p. 107-110
Appears in Collections:Actas de congresos
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