Identificador persistente para citar o vincular este elemento:
http://hdl.handle.net/10553/46926
| Título: | Analytical models for PN cross varactors | Autores/as: | Pérez, J. A. González, B. García, J. Del Pino, J. Khemchandani, S. L. Hernández Ballester, Antonio |
Clasificación UNESCO: | 3307 Tecnología electrónica | Palabras clave: | Mos Varactors semiconductor device models capacitance measurement p-n junctions |
Fecha de publicación: | 2005 | Publicación seriada: | 2005 Spanish Conference on Electron Devices, Proceedings | Conferencia: | 5th Spanish Conference on Electron Devices | Resumen: | In this paper, models for the capacitance of cross integrated varactors based in the PN junction are presented. Three different approximations are assumed, in order to reproduce the measured results of the capacitance. The relative error with the measured capacitance is under 10% in all cases. | URI: | http://hdl.handle.net/10553/46926 | ISBN: | 0-7803-8810-0 | DOI: | 10.1109/SCED.2005.1504321 | Fuente: | 2005 Spanish Conference on Electron Devices, Proceedings,v. 2005 (1504321), p. 107-110 |
| Colección: | Actas de congresos |
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