|Title:||An advanced drain current model for DGMOSFETs including self-heating effects||Authors:||González, B.
Roldán, J. B.
Roldán, A. M.
|UNESCO Clasification:||3307 Tecnología electrónica||Keywords:||Thermal resistance
Integrated circuit modeling
|Issue Date:||2012||Conference:||2012 8th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2012||Abstract:||An advanced drain current model for symmetrical Double-Gate MOSFETs (DGMOSFETs), including short channel, velocity saturation and self-heating effects, is presented. The temperature dependence of the low-field mobility, saturation velocity and inversion charge is analyzed and accurately included in the model. Self-heating is considered through the thermal resistance of the device, which is estimated in two ways: from an equivalent thermal circuit and from numerical output characteristic curves, obtained with a commercial TCAD tool (Sentaurus by Synopsys), and fitted with a drain current model. The validity of the model is checked by comparing with simulation results, for the typical bias range used in integrated circuits.||URI:||http://hdl.handle.net/10553/46915||ISBN:||9781457711169||DOI:||10.1109/ICCDCS.2012.6188909||Source:||2012 8th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2012 (6188909)|
|Appears in Collections:||Actas de congresos|
checked on Mar 1, 2021