Please use this identifier to cite or link to this item: http://hdl.handle.net/10553/46915
Title: An advanced drain current model for DGMOSFETs including self-heating effects
Authors: González, B. 
Íñiguez, B.
Lázaro, A.
Roldán, J. B.
Roldán, A. M.
Cerdeira, A.
UNESCO Clasification: 3307 Tecnología electrónica
Keywords: Thermal resistance
Thermal conductivity
Integrated circuit modeling
Silicon
Logic gates
Issue Date: 2012
Conference: 2012 8th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2012 
Abstract: An advanced drain current model for symmetrical Double-Gate MOSFETs (DGMOSFETs), including short channel, velocity saturation and self-heating effects, is presented. The temperature dependence of the low-field mobility, saturation velocity and inversion charge is analyzed and accurately included in the model. Self-heating is considered through the thermal resistance of the device, which is estimated in two ways: from an equivalent thermal circuit and from numerical output characteristic curves, obtained with a commercial TCAD tool (Sentaurus by Synopsys), and fitted with a drain current model. The validity of the model is checked by comparing with simulation results, for the typical bias range used in integrated circuits.
URI: http://hdl.handle.net/10553/46915
ISBN: 9781457711169
DOI: 10.1109/ICCDCS.2012.6188909
Source: 2012 8th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2012 (6188909)
Appears in Collections:Actas de congresos
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