Please use this identifier to cite or link to this item: http://hdl.handle.net/10553/46915
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dc.contributor.authorGonzález, B.en_US
dc.contributor.authorÍñiguez, B.en_US
dc.contributor.authorLázaro, A.en_US
dc.contributor.authorRoldán, J. B.en_US
dc.contributor.authorRoldán, A. M.en_US
dc.contributor.authorCerdeira, A.en_US
dc.date.accessioned2018-11-23T09:22:54Z-
dc.date.available2018-11-23T09:22:54Z-
dc.date.issued2012en_US
dc.identifier.isbn9781457711169en_US
dc.identifier.urihttp://hdl.handle.net/10553/46915-
dc.description.abstractAn advanced drain current model for symmetrical Double-Gate MOSFETs (DGMOSFETs), including short channel, velocity saturation and self-heating effects, is presented. The temperature dependence of the low-field mobility, saturation velocity and inversion charge is analyzed and accurately included in the model. Self-heating is considered through the thermal resistance of the device, which is estimated in two ways: from an equivalent thermal circuit and from numerical output characteristic curves, obtained with a commercial TCAD tool (Sentaurus by Synopsys), and fitted with a drain current model. The validity of the model is checked by comparing with simulation results, for the typical bias range used in integrated circuits.en_US
dc.languageengen_US
dc.source2012 8th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2012 (6188909)en_US
dc.subject3307 Tecnología electrónicaen_US
dc.subject.otherThermal resistanceen_US
dc.subject.otherThermal conductivityen_US
dc.subject.otherIntegrated circuit modelingen_US
dc.subject.otherSiliconen_US
dc.subject.otherLogic gatesen_US
dc.titleAn advanced drain current model for DGMOSFETs including self-heating effectsen_US
dc.typeinfo:eu-repo/semantics/conferenceObjecten_US
dc.typeConferenceObjecten_US
dc.relation.conference2012 8th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2012
dc.identifier.doi10.1109/ICCDCS.2012.6188909
dc.identifier.scopus84860993451-
dc.contributor.authorscopusid56082155300-
dc.contributor.authorscopusid55148428400-
dc.contributor.authorscopusid56036357200-
dc.contributor.authorscopusid7006608138-
dc.contributor.authorscopusid35956786900-
dc.contributor.authorscopusid7003780995-
dc.identifier.issue6188909-
dc.investigacionIngeniería y Arquitecturaen_US
dc.type2Actas de congresosen_US
dc.utils.revisionen_US
dc.date.coverdateMayo 2012
dc.identifier.conferenceidevents121435
dc.identifier.ulpgces
item.grantfulltextnone-
item.fulltextSin texto completo-
crisitem.author.deptIUMA Sistemas de Información y Comunicaciones-
crisitem.author.deptIU de Microelectrónica Aplicada-
crisitem.author.deptDepartamento de Ingeniería Electrónica y Automática-
crisitem.author.orcid0000-0001-6864-9736-
crisitem.author.parentorgIU de Microelectrónica Aplicada-
crisitem.author.fullNameGonzález Pérez, Benito-
crisitem.event.eventsstartdate14-03-2012-
crisitem.event.eventsenddate17-03-2012-
Appears in Collections:Actas de congresos
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