|Title:||Circuits for low power consumption in GaAs technology||Authors:||Reina, Rodrigo M.
Charry, Edgar R.
Lopez, José F.
|UNESCO Clasification:||3307 Tecnología electrónica||Keywords:||Gallium arsenide
|Issue Date:||1998||Journal:||Proceedings - 11th Brazilian Symposium on Integrated Circuit Design, SBCCI 1998||Conference:||11th Brazilian Symposium on Integrated Circuit Design, SBCCI 1998||Abstract:||In this paper we report the design of a new adder structure suitable for high speed, low power, digital applications. This adder was implemented using a new logic proposed recently, namely Pseudo-dynamic Latched Logic (PDDL), in MESFET technology using Vitesse H-GaAs III 0.6 /spl mu/m technology. Static and pseudo-dynamic adders were studied in order to make comparisons in terms of delay and power dissipation. These circuits were chosen due to the fact that they have a strong influence on the performance of data and signal processors. HSPICE simulation indicates operation up to 833 MHz with a 1 V power supply. Considering the delay-power characteristics as a function of power supply, it was found that a good tradeoff is obtained when using a 1 V power supply. Power dissipation of 4.96 /spl mu/W/MHz was obtained. Such extremely low power dissipation confirms that with this type of logic, high performance VLSI systems can be implemented.||URI:||http://hdl.handle.net/10553/45085||ISBN:||0818687045
|DOI:||10.1109/SBCCI.1998.715441||Source:||Proceedings - 11th Brazilian Symposium on Integrated Circuit Design, SBCCI 1998,v. 1998-September (715441), p. 200-203|
|Appears in Collections:||Actas de congresos|
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