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Title: | Circuits for low power consumption in GaAs technology | Authors: | Reina, Rodrigo M. Charry, Edgar R. Lopez, José F. Sarmiento, R. |
UNESCO Clasification: | 3307 Tecnología electrónica | Keywords: | Gallium arsenide Power dissipation Power supplies Delay MESFETs |
Issue Date: | 1998 | Journal: | Proceedings - 11th Brazilian Symposium on Integrated Circuit Design, SBCCI 1998 | Conference: | 11th Brazilian Symposium on Integrated Circuit Design, SBCCI 1998 | Abstract: | In this paper we report the design of a new adder structure suitable for high speed, low power, digital applications. This adder was implemented using a new logic proposed recently, namely Pseudo-dynamic Latched Logic (PDDL), in MESFET technology using Vitesse H-GaAs III 0.6 /spl mu/m technology. Static and pseudo-dynamic adders were studied in order to make comparisons in terms of delay and power dissipation. These circuits were chosen due to the fact that they have a strong influence on the performance of data and signal processors. HSPICE simulation indicates operation up to 833 MHz with a 1 V power supply. Considering the delay-power characteristics as a function of power supply, it was found that a good tradeoff is obtained when using a 1 V power supply. Power dissipation of 4.96 /spl mu/W/MHz was obtained. Such extremely low power dissipation confirms that with this type of logic, high performance VLSI systems can be implemented. | URI: | http://hdl.handle.net/10553/45085 | ISBN: | 0818687045 9780818687044 |
DOI: | 10.1109/SBCCI.1998.715441 | Source: | Proceedings - 11th Brazilian Symposium on Integrated Circuit Design, SBCCI 1998,v. 1998-September (715441), p. 200-203 |
Appears in Collections: | Actas de congresos |
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