Please use this identifier to cite or link to this item:
http://hdl.handle.net/10553/42012
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Gonzalez, Benito | en_US |
dc.contributor.author | Rodriguez, Raul | en_US |
dc.contributor.author | Lázaro, Antonio | en_US |
dc.contributor.other | Gonzalez, Benito | - |
dc.contributor.other | Lazaro, Antonio | - |
dc.date.accessioned | 2018-09-28T07:23:34Z | - |
dc.date.available | 2018-09-28T07:23:34Z | - |
dc.date.issued | 2018 | en_US |
dc.identifier.issn | 0018-9383 | en_US |
dc.identifier.uri | http://hdl.handle.net/10553/42012 | - |
dc.description.abstract | Thermal conductance in multifinger silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistors (MOSFETs) is usually modeled at room temperature with a linear dependence on the total gate width, which is valid only when thermal coupling saturates. This paper presents a physically based model for calculating the thermal resistance of SOI-MOSFETs that accounts for progressive thermal coupling as the number of fingers increases and the substrate temperature. The model, extracted from a variety of gate geometries using the ac conductance method, correctly predicts the temperature rise in the device channel up to a substrate temperature of 150 °C. Finally, this simple thermal resistance model, which is applicable to nanometer-scale transistors, can easily be added to circuit simulators. | en_US |
dc.language | eng | en_US |
dc.publisher | 0018-9383 | - |
dc.relation.ispartof | IEEE Transactions on Electron Devices | en_US |
dc.source | IEEE Transactions on Electron Devices[ISSN 0018-9383],v. 65 (8419075), p. 3626-3632 | en_US |
dc.subject | 3307 Tecnología electrónica | en_US |
dc.subject.other | Heat-Transport | en_US |
dc.subject.other | Model | en_US |
dc.subject.other | Methodology | en_US |
dc.subject.other | Finfets | en_US |
dc.subject.other | Devices | en_US |
dc.title | Thermal resistance characterization for multifinger SOI-MOSFETs | en_US |
dc.type | info:eu-repo/semantics/Article | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1109/TED.2018.2853799 | en_US |
dc.identifier.scopus | 85050587779 | - |
dc.identifier.isi | 000442357000005 | - |
dcterms.isPartOf | Ieee Transactions On Electron Devices | - |
dcterms.source | Ieee Transactions On Electron Devices[ISSN 0018-9383],v. 65 (9), p. 3626-3632 | - |
dc.contributor.authorscopusid | 56082155300 | - |
dc.contributor.authorscopusid | 7401544516 | - |
dc.contributor.authorscopusid | 56036357200 | - |
dc.description.lastpage | 3632 | en_US |
dc.identifier.issue | 9 | - |
dc.description.firstpage | 3626 | en_US |
dc.relation.volume | 65 | en_US |
dc.investigacion | Ingeniería y Arquitectura | en_US |
dc.type2 | Artículo | en_US |
dc.identifier.wos | WOS:000442357000005 | - |
dc.contributor.daisngid | 1092737 | - |
dc.contributor.daisngid | 3859066 | - |
dc.contributor.daisngid | 32207138 | - |
dc.contributor.daisngid | 56325 | - |
dc.identifier.investigatorRID | H-6803-2015 | - |
dc.identifier.investigatorRID | No ID | - |
dc.utils.revision | Sí | en_US |
dc.contributor.wosstandard | WOS:Gonzalez, B | - |
dc.contributor.wosstandard | WOS:Rodriguez, R | - |
dc.contributor.wosstandard | WOS:Lazaro, A | - |
dc.date.coverdate | Septiembre 2018 | en_US |
dc.identifier.ulpgc | Sí | en_US |
dc.contributor.buulpgc | BU-TEL | en_US |
dc.description.sjr | 0,853 | - |
dc.description.jcr | 2,704 | - |
dc.description.sjrq | Q1 | - |
dc.description.jcrq | Q2 | - |
dc.description.scie | SCIE | - |
item.grantfulltext | open | - |
item.fulltext | Con texto completo | - |
crisitem.author.dept | GIR IUMA: Tecnología Microelectrónica | - |
crisitem.author.dept | IU de Microelectrónica Aplicada | - |
crisitem.author.dept | Departamento de Ingeniería Electrónica y Automática | - |
crisitem.author.orcid | 0000-0001-6864-9736 | - |
crisitem.author.orcid | 0000-0002-4457-8942 | - |
crisitem.author.parentorg | IU de Microelectrónica Aplicada | - |
crisitem.author.fullName | González Pérez, Benito | - |
crisitem.author.fullName | Rodríguez Del Rosario, Raúl | - |
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