Please use this identifier to cite or link to this item: http://hdl.handle.net/10553/42012
Title: Thermal resistance characterization for multifinger SOI-MOSFETs
Authors: Gonzalez, Benito 
Rodriguez, Raul 
Lázaro, Antonio
UNESCO Clasification: 3307 Tecnología electrónica
Keywords: Heat-Transport
Model
Methodology
Finfets
Devices
Issue Date: 2018
Publisher: 0018-9383
Journal: IEEE Transactions on Electron Devices 
Abstract: Thermal conductance in multifinger silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistors (MOSFETs) is usually modeled at room temperature with a linear dependence on the total gate width, which is valid only when thermal coupling saturates. This paper presents a physically based model for calculating the thermal resistance of SOI-MOSFETs that accounts for progressive thermal coupling as the number of fingers increases and the substrate temperature. The model, extracted from a variety of gate geometries using the ac conductance method, correctly predicts the temperature rise in the device channel up to a substrate temperature of 150 °C. Finally, this simple thermal resistance model, which is applicable to nanometer-scale transistors, can easily be added to circuit simulators.
URI: http://hdl.handle.net/10553/42012
ISSN: 0018-9383
DOI: 10.1109/TED.2018.2853799
Source: IEEE Transactions on Electron Devices[ISSN 0018-9383],v. 65 (8419075), p. 3626-3632
Appears in Collections:Artículos
Adobe PDF (1,09 MB)
Show full item record

Google ScholarTM

Check

Altmetric


Share



Export metadata



Items in accedaCRIS are protected by copyright, with all rights reserved, unless otherwise indicated.