Publicaciones

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9 artículo

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Title Issue Date
A novel geometry for circular series connected multilevel inductors for CMOS RF integrated circuits Aguilera, Jaime; Meléndez, Juan; Berenguer, Roc; Sendra, José Ramón ; Hernández Ballester, Antonio , et al Issued date: 2002 DOI: 10.1109/TED.2002.1003756 Source: IEEE Transactions on Electron Devices[ISSN 0018-9383],v. 49, p. 1084-1086 JCR: 1,936 - Q1 SCIE Artículo
An analytical model of electric substrate losses for planar spiral inductors on silicon Gõni, Amaya; del Pino, Javier ; González, Benito ; Hernández Ballester, Antonio Issued date: 2007 DOI: 10.1109/TED.2006.890366 Source: IEEE Transactions on Electron Devices[ISSN 0018-9383],v. 54(3), p. 546-553 JCR: 2,165 - Q1 SCIE Artículo
Thermal resistance characterization for multifinger SOI-MOSFETs Gonzalez, Benito ; Rodriguez, Raul ; Lázaro, Antonio Issued date: 2018 DOI: 10.1109/TED.2018.2853799 Source: IEEE Transactions on Electron Devices[ISSN 0018-9383],v. 65 (8419075), p. 3626-3632 SJR: 0,853 - Q1 JCR: 2,704 - Q2 SCIE Artículo
Temperature-Dependent Thermal Capacitance Characterization for SOI-MOSFETs Gonzalez, Benito ; Aja, Beatriz; Artal, Eduardo; Lazaro, Antonio; Núñez Ordóñez, Antonio Issued date: 2019 DOI: 10.1109/TED.2019.2935500 Source: Ieee Transactions On Electron Devices[ISSN 0018-9383],v. 66 (10), p. 4120-4125 SJR: 0,879 - Q1 JCR: 2,913 - Q2 SCIE Artículo
Geometric Modeling of Thermal Resistance in GaN HEMTs on Silicon Gonzalez, Benito ; De Santi, Carlo; Rampazzo, Fabiana; Meneghini, Matteo; Núñez Ordóñez, Antonio , et al Issued date: 2020 DOI: 10.1109/TED.2020.3028358 Source: IEEE Transactions on Electron Devices [ISSN 0018-9383], v. 67 (12), p. 5408-5414, (Diciembre 2020) SJR: 0,828 - Q1 JCR: 2,917 - Q2 SCIE Artículo
RF Extraction of Thermal Resistance for GaN HEMTs on Silicon González, Benito ; Lazaro, A; Rodriguez, R Issued date: 2022 DOI: 10.1109/TED.2022.3159611 Source: IEEE Transactions on Electron Devices [ISSN 0018-9383], v. 69(5), p. 2307-2312 SJR: 0,773 - Q2 JCR: 3,1 - Q2 SCIE MIAR ICDS: 11,0 Artículo
Gate Length-Dependent Thermal Impedance Characterization of PD-SOI MOSFETs González Pérez, Benito ; Cabrera Peña, José María ; Lazaro, Antonio Issued date: 2022 DOI: 10.1109/TED.2021.3132854 Source: IEEE Transactions on Electron Devices [ISSN 0018-9383], v. 69 (2), p. 469-474, (Febrero 2022) SJR: 0,773 - Q2 JCR: 3,1 - Q2 SCIE MIAR ICDS: 11,0 Artículo
Gate Geometry-Dependent Thermal Impedance of Depletion Mode HEMTs Gonzalez, Benito ; Lazaro, Antonio; Rodriguez, Raul Issued date: 2023 DOI: 10.1109/TED.2023.3305313 Source: IEEE Transactions on Electron Devices[ISSN 0018-9383], (Enero 2023) SJR: 0,785 - Q1 JCR: 3,1 - Q2 SCIE MIAR ICDS: 11,0 Artículo
A Compact DC Model for PEDOT-Based Organic Electrochemical Transistors (OECTs) González Pérez, Benito ; Masip, Laia; Lázaro, Marc; Villarino, Ramón; Girbau, David, et al Issued date: 2024 DOI: 10.1109/TED.2024.3469170 Source: IEEE Transactions on Electron Devices [ISSN 0018-9383], (2024) SJR: 0,785 - Q1 JCR: 3,1 - Q2 SCIE MIAR ICDS: 11,0 Artículo