Identificador persistente para citar o vincular este elemento:
http://hdl.handle.net/10553/47602
| Título: | A fully integrated low-noise amplifier in SiGe 0.35 μm technology for 802.11a WIFI applications | Autores/as: | Pulido, R. Khemchandani, S. L. Goni-Iturri, A. Diaz, R. Hernández Ballester, Antonio Del Pino, J. |
Fecha de publicación: | 2005 | Editor/a: | 0277-786X | Publicación seriada: | Proceedings of SPIE - The International Society for Optical Engineering | Conferencia: | VLSI Circuits and Systems II | Resumen: | In the last years, WIFI market has shown an incredible growth, exceeding expectations. This paper presents the design of two fully integrated LNAs using a low cost SiGe 0.35 μm technology for the 5 GHz band, according to the IEEE 802.11a WIFI standard. One LNA has an asymmetric configuration and the other a balanced configuration. A comparison between the two LNAs has been made. All passives devices are on chip, including integrated inductors which have been designed by electromagnetic simulations. This work demonstrates the feasibility of a low cost silicon technology for the design of 5 GHz band circuits. | URI: | http://hdl.handle.net/10553/47602 | ISBN: | 0-8194-5832-5 | ISSN: | 0277-786X | DOI: | 10.1117/12.608508 | Fuente: | Proceedings of SPIE-VLSI Circuits and Systems II [ISSN 0277-786X],v. 5837, p. 1064-1074, (30 junio 2005) |
| Colección: | Actas de congresos |
Los elementos en ULPGC accedaCRIS están protegidos por derechos de autor con todos los derechos reservados, a menos que se indique lo contrario.