Please use this identifier to cite or link to this item: http://hdl.handle.net/10553/47602
Title: A fully integrated low-noise amplifier in SiGe 0.35 μm technology for 802.11a WIFI applications
Authors: Pulido, R.
Khemchandani, S. L. 
Goni-Iturri, A.
Diaz, R.
Hernández, A.
Del Pino, J. 
Issue Date: 2005
Publisher: 0277-786X
Journal: Proceedings of SPIE - The International Society for Optical Engineering 
Conference: VLSI Circuits and Systems II 
Abstract: In the last years, WIFI market has shown an incredible growth, exceeding expectations. This paper presents the design of two fully integrated LNAs using a low cost SiGe 0.35 μm technology for the 5 GHz band, according to the IEEE 802.11a WIFI standard. One LNA has an asymmetric configuration and the other a balanced configuration. A comparison between the two LNAs has been made. All passives devices are on chip, including integrated inductors which have been designed by electromagnetic simulations. This work demonstrates the feasibility of a low cost silicon technology for the design of 5 GHz band circuits.
URI: http://hdl.handle.net/10553/47602
ISSN: 0277-786X
DOI: 10.1117/12.608508
Source: Proceedings of SPIE - The International Society for Optical Engineering[ISSN 0277-786X],v. 5837 PART II (122), p. 1064-1074
Appears in Collections:Actas de congresos
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