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http://hdl.handle.net/10553/47602
| Title: | A fully integrated low-noise amplifier in SiGe 0.35 μm technology for 802.11a WIFI applications | Authors: | Pulido, R. Khemchandani, S. L. Goni-Iturri, A. Diaz, R. Hernández, A. Del Pino, J. |
Issue Date: | 2005 | Publisher: | 0277-786X | Journal: | Proceedings of SPIE - The International Society for Optical Engineering | Conference: | VLSI Circuits and Systems II | Abstract: | In the last years, WIFI market has shown an incredible growth, exceeding expectations. This paper presents the design of two fully integrated LNAs using a low cost SiGe 0.35 μm technology for the 5 GHz band, according to the IEEE 802.11a WIFI standard. One LNA has an asymmetric configuration and the other a balanced configuration. A comparison between the two LNAs has been made. All passives devices are on chip, including integrated inductors which have been designed by electromagnetic simulations. This work demonstrates the feasibility of a low cost silicon technology for the design of 5 GHz band circuits. | URI: | http://hdl.handle.net/10553/47602 | ISSN: | 0277-786X | DOI: | 10.1117/12.608508 | Source: | Proceedings of SPIE - The International Society for Optical Engineering[ISSN 0277-786X],v. 5837 PART II (122), p. 1064-1074 |
| Appears in Collections: | Actas de congresos |
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