|Title:||A fully integrated low-noise amplifier in SiGe 0.35 μm technology for 802.11a WIFI applications||Authors:||Pulido, R.
Khemchandani, S. L.
Del Pino, J.
|Issue Date:||2005||Publisher:||0277-786X||Journal:||Proceedings of SPIE - The International Society for Optical Engineering||Conference:||VLSI Circuits and Systems II||Abstract:||In the last years, WIFI market has shown an incredible growth, exceeding expectations. This paper presents the design of two fully integrated LNAs using a low cost SiGe 0.35 μm technology for the 5 GHz band, according to the IEEE 802.11a WIFI standard. One LNA has an asymmetric configuration and the other a balanced configuration. A comparison between the two LNAs has been made. All passives devices are on chip, including integrated inductors which have been designed by electromagnetic simulations. This work demonstrates the feasibility of a low cost silicon technology for the design of 5 GHz band circuits.||URI:||http://hdl.handle.net/10553/47602||ISSN:||0277-786X||DOI:||10.1117/12.608508||Source:||Proceedings of SPIE - The International Society for Optical Engineering[ISSN 0277-786X],v. 5837 PART II (122), p. 1064-1074|
|Appears in Collections:||Actas de congresos|
checked on Feb 21, 2021
Items in accedaCRIS are protected by copyright, with all rights reserved, unless otherwise indicated.