Identificador persistente para citar o vincular este elemento: http://hdl.handle.net/10553/47602
Título: A fully integrated low-noise amplifier in SiGe 0.35 μm technology for 802.11a WIFI applications
Autores/as: Pulido, R.
Khemchandani, S. L. 
Goni-Iturri, A.
Diaz, R.
Hernández Ballester, Antonio 
Del Pino, J. 
Fecha de publicación: 2005
Editor/a: 0277-786X
Publicación seriada: Proceedings of SPIE - The International Society for Optical Engineering 
Conferencia: VLSI Circuits and Systems II 
Resumen: In the last years, WIFI market has shown an incredible growth, exceeding expectations. This paper presents the design of two fully integrated LNAs using a low cost SiGe 0.35 μm technology for the 5 GHz band, according to the IEEE 802.11a WIFI standard. One LNA has an asymmetric configuration and the other a balanced configuration. A comparison between the two LNAs has been made. All passives devices are on chip, including integrated inductors which have been designed by electromagnetic simulations. This work demonstrates the feasibility of a low cost silicon technology for the design of 5 GHz band circuits.
URI: http://hdl.handle.net/10553/47602
ISBN: 0-8194-5832-5
ISSN: 0277-786X
DOI: 10.1117/12.608508
Fuente: Proceedings of SPIE-VLSI Circuits and Systems II [ISSN 0277-786X],v. 5837, p. 1064-1074, (30 junio 2005)
Colección:Actas de congresos
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