Please use this identifier to cite or link to this item:
http://hdl.handle.net/10553/46917
| Title: | DC thermal numerical simulation of DG MOSFET | Authors: | González, B. Iñiguez, B. Lazaro, A. Cerdeira, A. |
UNESCO Clasification: | 3307 Tecnología electrónica | Keywords: | Thermal conductivity Thermal resistance MOSFET circuits Logic gates Silicon, et al |
Issue Date: | 2011 | Conference: | 8th Spanish Conference on Electron Devices, CDE 2011 | Abstract: | DC numerical simulations of a Double-Gate (DG) MOSFET are performed including self-heating. Considering proper thermal conductivity, hydrodynamic model and optimizing pads, the resulting maximum lattice temperature of the transistor is 345 K, being located in channel layer, at the drain extension. | URI: | http://hdl.handle.net/10553/46917 | ISBN: | 9781424478637 | DOI: | 10.1109/SCED.2011.5744223 | Source: | Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011 (5744223) |
| Appears in Collections: | Actas de congresos |
Items in accedaCRIS are protected by copyright, with all rights reserved, unless otherwise indicated.