|Title:||DC thermal numerical simulation of DG MOSFET||Authors:||González, B.
|UNESCO Clasification:||3307 Tecnología electrónica||Keywords:||Thermal conductivity
Silicon, et al
|Issue Date:||2011||Conference:||8th Spanish Conference on Electron Devices, CDE 2011||Abstract:||DC numerical simulations of a Double-Gate (DG) MOSFET are performed including self-heating. Considering proper thermal conductivity, hydrodynamic model and optimizing pads, the resulting maximum lattice temperature of the transistor is 345 K, being located in channel layer, at the drain extension.||URI:||http://hdl.handle.net/10553/46917||ISBN:||9781424478637||DOI:||10.1109/SCED.2011.5744223||Source:||Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011 (5744223)|
|Appears in Collections:||Actas de congresos|
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