Please use this identifier to cite or link to this item:
Title: DC thermal numerical simulation of DG MOSFET
Authors: González, B. 
Iñiguez, B.
Lazaro, A.
Cerdeira, A.
UNESCO Clasification: 3307 Tecnología electrónica
Keywords: Thermal conductivity
Thermal resistance
MOSFET circuits
Logic gates
Silicon, et al
Issue Date: 2011
Conference: 8th Spanish Conference on Electron Devices, CDE 2011 
Abstract: DC numerical simulations of a Double-Gate (DG) MOSFET are performed including self-heating. Considering proper thermal conductivity, hydrodynamic model and optimizing pads, the resulting maximum lattice temperature of the transistor is 345 K, being located in channel layer, at the drain extension.
ISBN: 9781424478637
DOI: 10.1109/SCED.2011.5744223
Source: Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011 (5744223)
Appears in Collections:Actas de congresos
Show full item record

Page view(s)

checked on Jul 22, 2023

Google ScholarTM




Export metadata

Items in accedaCRIS are protected by copyright, with all rights reserved, unless otherwise indicated.