Please use this identifier to cite or link to this item: http://hdl.handle.net/10553/46917
Title: DC thermal numerical simulation of DG MOSFET
Authors: González, B. 
Iñiguez, B.
Lazaro, A.
Cerdeira, A.
UNESCO Clasification: 3307 Tecnología electrónica
Keywords: Thermal conductivity
Thermal resistance
MOSFET circuits
Logic gates
Silicon
Temperature dependence
Conductivity
Issue Date: 2011
Conference: 8th Spanish Conference on Electron Devices, CDE 2011 
Abstract: DC numerical simulations of a Double-Gate (DG) MOSFET are performed including self-heating. Considering proper thermal conductivity, hydrodynamic model and optimizing pads, the resulting maximum lattice temperature of the transistor is 345 K, being located in channel layer, at the drain extension.
URI: http://hdl.handle.net/10553/46917
ISBN: 9781424478637
DOI: 10.1109/SCED.2011.5744223
Source: Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011 (5744223)
Appears in Collections:Actas de congresos
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