Identificador persistente para citar o vincular este elemento:
http://hdl.handle.net/10553/43596
| Título: | Coupled varactor based on PN junction and accumulation MOS for RF applications | Autores/as: | García, J. Marrero-Martín, M. González, B. Aldea, I. Hernández Ballester, Antonio |
Clasificación UNESCO: | 3307 Tecnología electrónica | Palabras clave: | Varactors , Capacitance , Voltage measurement , Tuning , Q factor , Junctions , Radio frequency | Fecha de publicación: | 2011 | Publicación seriada: | Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011 | Conferencia: | 8th Spanish Conference on Electron Devices, CDE 2011 | Resumen: | In this work varactors based on pn-junction have been connected in parallel with accumulation mode MOS ones, in order to increase the final capacitance without losing the particular characteristics. So, three double varactors have been designed, fabricated and on-wafer measured. Results demonstrate that the combination of these varactors improve the global performance in relation to quality factor and tuning range. | URI: | http://hdl.handle.net/10553/43596 | ISBN: | 9781424478637 | DOI: | 10.1109/SCED.2011.5744225 | Fuente: | Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011 (5744225) |
| Colección: | Actas de congresos |
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