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http://hdl.handle.net/10553/43591
| Título: | Rectennas design using DG-MOSFETs | Autores/as: | Rodríguez, Raúl Gonzalez, B. Garcia, J. Marrero Martín, Margarita Luisa Hernández Ballester, Antonio |
Clasificación UNESCO: | 3307 Tecnología electrónica | Palabras clave: | RFIDs, UWB, Rectennas, SOI, DG-MOSFETs, Verilog-A | Fecha de publicación: | 2013 | Editor/a: | 0277-786X | Publicación seriada: | Proceedings of SPIE - The International Society for Optical Engineering | Conferencia: | Conference on VLSI Circuits and Systems VI | Resumen: | The objective of this work is to study the possibility of implementing SOI rectennas for UWB RFIDs, with undoped Double Gate MOSFETs (DG-MOSFETs). For that purpose we use two commercial TCAD tools: Sentaums Device (created by Synopsys), and ADS (created by Agilent) where in a large signal circuit model derived for the transistors is implemented with Verilog-A. Once the DG-MOSFETs output characteristics are fit, the rectennas performance at high frequencies is simulated; numerical and electrical results are successfully compared. | URI: | http://hdl.handle.net/10553/43591 | ISBN: | 9780819495617 | ISSN: | 0277-786X | DOI: | 10.1117/12.2017149 | Fuente: | Vlsi Circuits And Systems Vi[ISSN 0277-786X],v. 8764 |
| Colección: | Actas de congresos |
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