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Title: | Microscopic origin of n-type behavior in Si-doped AlN | Authors: | Fernández Hevia, Daniel Stampfl, Catherine Viñes, Francesc Illas, Francesc |
UNESCO Clasification: | 3303 ingeniería y tecnología químicas | Keywords: | Molecular-Beam Epitaxy Conduction Alxga1-Xn Donor Gan, et al |
Issue Date: | 2013 | Project: | Efesot-Eficiencia Energética en Protección Contra Sobretensiones Cascada-Cambiador de Tomas en Carga Para Redes de Distribución Activa de Energía Eléctrica. |
Journal: | Physical Review B - Condensed Matter and Materials Physics | Abstract: | In contrast to a long held belief, it has been shown that n-type AlN can be achieved through Si-doping. This is unexplainable from the current theoretical understanding, a situation that hinders further progress in AlN-based ultraviolet (UV) technologies. From first-principles calculations, we find that n-type behavior arises under N-rich growth conditions due to high Si solubility and to the formation of V Al-bound Si clusters. We show that metal-rich growth may lead to weak n-type behavior due to oxygen impurities binding and deactivating cation vacancies. We provide clues for designing production processes for n-type AlN as a base material for potential new UV sources. | URI: | http://hdl.handle.net/10553/75664 | ISSN: | 1098-0121 | DOI: | 10.1103/PhysRevB.88.085202 | Source: | Physical Review B [ISSN 1098-0121], v. 88 (8), 085202, (Agosto 2013) |
Appears in Collections: | Artículos |
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