Please use this identifier to cite or link to this item: http://hdl.handle.net/10553/63419
Title: RHBD Techniques to Mitigate SEU and SET in CMOS Frequency Synthesizers
Authors: Diez-Acereda, V
Lalchand Khemchandani, Sunil 
Del Pino Suárez, Francisco Javier 
Mateos Angulo, S. 
UNESCO Clasification: 3307 Tecnología electrónica
Keywords: CMOS technology
Radiation effects
Single event transient
Single event upset
Issue Date: 2019
Journal: Electronics (Switzerland) 
Abstract: This paper presents a thorough study of radiation effects on a frequency synthesizer designed in a 0.18 mu m CMOS technology. In CMOS devices, the effect of a high energy particle impact can be modeled by a current pulse connected to the drain of the transistors. The effects of SET (single event transient) and SEU (single event upset) were analyzed connecting current pulses to the drains of all the transistors and analyzing the amplitude variations and phase shifts obtained at the output nodes. Following this procedure, the most sensitive circuits were detected. This paper proposes a combination of radiation hardening-by-design techniques (RHBD) such as resistor-capacitor (RC) filtering or local circuit-redundancy to mitigate the effects of radiation. The proposed modifications make the frequency synthesizer more robust against radiation.
URI: http://hdl.handle.net/10553/63419
ISSN: 2079-9292
DOI: 10.3390/electronics8060690
Source: Electronics [ISSN 2079-9292], v. 8 (6)
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