Identificador persistente para citar o vincular este elemento: http://hdl.handle.net/10553/63419
Título: RHBD Techniques to Mitigate SEU and SET in CMOS Frequency Synthesizers
Autores/as: Díez Acereda, Victoria You 
Lalchand Khemchandani, Sunil 
Del Pino Suárez, Francisco Javier 
Mateos Angulo, Sergio 
Clasificación UNESCO: 3307 Tecnología electrónica
Palabras clave: CMOS technology
Radiation effects
Single event transient
Single event upset
Fecha de publicación: 2019
Editor/a: MDPI
Proyectos: Diseño de Circuitos de Comunicaciones Para Alta Radiacion Ambiental 
Diseño de Amplificadores de Potencia Integrados de Nitruro de Galio Para Comunicaciones 
Exploring Modern Integrated Circuits Design in Harsh Environments. 
Publicación seriada: Electronics (Switzerland) 
Resumen: This paper presents a thorough study of radiation effects on a frequency synthesizer designed in a 0.18 mu m CMOS technology. In CMOS devices, the effect of a high energy particle impact can be modeled by a current pulse connected to the drain of the transistors. The effects of SET (single event transient) and SEU (single event upset) were analyzed connecting current pulses to the drains of all the transistors and analyzing the amplitude variations and phase shifts obtained at the output nodes. Following this procedure, the most sensitive circuits were detected. This paper proposes a combination of radiation hardening-by-design techniques (RHBD) such as resistor-capacitor (RC) filtering or local circuit-redundancy to mitigate the effects of radiation. The proposed modifications make the frequency synthesizer more robust against radiation.
URI: http://hdl.handle.net/10553/63419
ISBN: 978-3-03921-279-8
ISSN: 2079-9292
DOI: 10.3390/electronics8060690
Fuente: Electronics [ISSN 2079-9292], v. 8 (6), 690, (Junio 2019)
Colección:Artículos
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