|Title:||Complementary neu-GaAs structure||Authors:||Celinski, P.
López, J. F.
|Issue Date:||2000||Publisher:||0013-5194||Journal:||Electronics letters||Abstract:||A neu-MOS like transistor structure using complementary GaAs HIGFET transistors, neu-GaAs, which uses capacitively coupled inputs onto a floating gate is presented. The design and simulation results of a neu-GaAs ripple carry adder are presented, demonstrating the potential for a very significant reduction in transistor count and area for equal power dissipation, through the use of neu-GaAs in VLSI design. A neu-GaAs design is presented which does not require floating gate initialization due to the presence of a small gate leakage current in the HIGFET structure.||URI:||http://hdl.handle.net/10553/52230||ISSN:||0013-5194||DOI:||10.1049/el:20000384||Source:||Electronics Letters[ISSN 0013-5194],v. 36, p. 424-425|
|Appears in Collections:||Artículos|
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