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Title: Complementary neu-GaAs structure
Authors: Celinski, P.
López, J. F. 
Al-Sarawi, S.
Abbott, D.
Issue Date: 2000
Publisher: 0013-5194
Journal: Electronics letters 
Abstract: A neu-MOS like transistor structure using complementary GaAs HIGFET transistors, neu-GaAs, which uses capacitively coupled inputs onto a floating gate is presented. The design and simulation results of a neu-GaAs ripple carry adder are presented, demonstrating the potential for a very significant reduction in transistor count and area for equal power dissipation, through the use of neu-GaAs in VLSI design. A neu-GaAs design is presented which does not require floating gate initialization due to the presence of a small gate leakage current in the HIGFET structure.
ISSN: 0013-5194
DOI: 10.1049/el:20000384
Source: Electronics Letters[ISSN 0013-5194],v. 36, p. 424-425
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