Please use this identifier to cite or link to this item: http://hdl.handle.net/10553/52230
Title: Complementary neu-GaAs structure
Authors: Celinski, P.
López, J. F. 
Al-Sarawi, S.
Abbott, D.
Issue Date: 2000
Publisher: 0013-5194
Journal: Electronics letters 
Abstract: A neu-MOS like transistor structure using complementary GaAs HIGFET transistors, neu-GaAs, which uses capacitively coupled inputs onto a floating gate is presented. The design and simulation results of a neu-GaAs ripple carry adder are presented, demonstrating the potential for a very significant reduction in transistor count and area for equal power dissipation, through the use of neu-GaAs in VLSI design. A neu-GaAs design is presented which does not require floating gate initialization due to the presence of a small gate leakage current in the HIGFET structure.
URI: http://hdl.handle.net/10553/52230
ISSN: 0013-5194
DOI: 10.1049/el:20000384
Source: Electronics Letters[ISSN 0013-5194],v. 36, p. 424-425
Appears in Collections:Artículos
Show full item record

SCOPUSTM   
Citations

2
checked on Jun 20, 2021

Page view(s)

24
checked on Jun 22, 2021

Google ScholarTM

Check

Altmetric


Share



Export metadata



Items in accedaCRIS are protected by copyright, with all rights reserved, unless otherwise indicated.