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http://hdl.handle.net/10553/52230
Title: | Complementary neu-GaAs structure | Authors: | Celinski, P. López, J. F. Al-Sarawi, S. Abbott, D. |
Issue Date: | 2000 | Publisher: | 0013-5194 | Journal: | Electronics letters | Abstract: | A neu-MOS like transistor structure using complementary GaAs HIGFET transistors, neu-GaAs, which uses capacitively coupled inputs onto a floating gate is presented. The design and simulation results of a neu-GaAs ripple carry adder are presented, demonstrating the potential for a very significant reduction in transistor count and area for equal power dissipation, through the use of neu-GaAs in VLSI design. A neu-GaAs design is presented which does not require floating gate initialization due to the presence of a small gate leakage current in the HIGFET structure. | URI: | http://hdl.handle.net/10553/52230 | ISSN: | 0013-5194 | DOI: | 10.1049/el:20000384 | Source: | Electronics Letters[ISSN 0013-5194],v. 36, p. 424-425 |
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