Please use this identifier to cite or link to this item:
https://accedacris.ulpgc.es/handle/10553/51591
| Title: | Reactive ion beam etching of aluminum indium antimonide, gallium indium antimonide heterostructures in electron cyclotron resonance methane/hydrogen/ nitrogen/silicon tetrachloride discharges at room temperature | Authors: | Sendra, J. R. Anguita, J. Pérez-Camacho, J. J. Briones, F. |
Issue Date: | 1995 | Publisher: | 0003-6951 | Journal: | Applied physics letters | URI: | https://accedacris.ulpgc.es/handle/10553/51591 | ISSN: | 0003-6951 | DOI: | 10.1063/1.115223 | Source: | Applied Physics Letters[ISSN 0003-6951],v. 67, p. 3289 |
| Appears in Collections: | Artículos |
Items in accedaCRIS are protected by copyright, with all rights reserved, unless otherwise indicated.