Please use this identifier to cite or link to this item: http://hdl.handle.net/10553/51591
Title: Reactive ion beam etching of aluminum indium antimonide, gallium indium antimonide heterostructures in electron cyclotron resonance methane/hydrogen/ nitrogen/silicon tetrachloride discharges at room temperature
Authors: Sendra, J. R. 
Anguita, J.
Pérez-Camacho, J. J.
Briones, F.
Issue Date: 1995
Publisher: 0003-6951
Journal: Applied physics letters 
URI: http://hdl.handle.net/10553/51591
ISSN: 0003-6951
DOI: 10.1063/1.115223
Source: Applied Physics Letters[ISSN 0003-6951],v. 67, p. 3289
Appears in Collections:Artículos
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