Identificador persistente para citar o vincular este elemento:
http://hdl.handle.net/10553/45462
| Título: | Flatness improvement for a shunt-peaked ultra-wideband low noise amplifier | Autores/as: | García-Vázquez, H. Khemchandani, Sunil L. Arias-Pérez, J. Del Pino, J. |
Clasificación UNESCO: | 3307 Tecnología electrónica | Palabras clave: | Low-noise amplifiers Gain S21 Noise figure |
Fecha de publicación: | 2010 | Editor/a: | 0192-6225 | Publicación seriada: | Microwave Journal | Resumen: | A novel configuration to achieve flat gain in wideband low noise amplifiers (LNA) is presented. It consists of a conventional shunt-peaking resistor, decoupled from the cascode stage through a capacitor. A trade-off between the voltage headroom and bandwidth is obtained, improving the traditional shunt-peaking load. As an example, two LNAs for ultra-wideband (UWB), operating for mode I (3.1 to 4.8 GHz), are designed in CMOS 0.35 μm technology. The measured power gain is fairly flat, approximately 10 dB, for frequencies ranging from 3.1 to 5 GHz. | URI: | http://hdl.handle.net/10553/45462 | ISSN: | 0192-6225 | Fuente: | Microwave Journal[ISSN 0192-6225],v. 53, p. 74-82 |
| Colección: | Artículos |
Citas SCOPUSTM
2
actualizado el 10-nov-2024
Citas de WEB OF SCIENCETM
Citations
2
actualizado el 25-feb-2024
Visitas
59
actualizado el 04-may-2024
Google ScholarTM
Verifica
Comparte
Exporta metadatos
Los elementos en ULPGC accedaCRIS están protegidos por derechos de autor con todos los derechos reservados, a menos que se indique lo contrario.