|Title:||Flatness improvement for a shunt-peaked ultra-wideband low noise amplifier||Authors:||García-Vázquez, H.
Khemchandani, Sunil L.
Del Pino, J.
|UNESCO Clasification:||3307 Tecnología electrónica||Keywords:||Low-noise amplifiers
|Issue Date:||2010||Publisher:||0192-6225||Journal:||Microwave Journal||Abstract:||A novel configuration to achieve flat gain in wideband low noise amplifiers (LNA) is presented. It consists of a conventional shunt-peaking resistor, decoupled from the cascode stage through a capacitor. A trade-off between the voltage headroom and bandwidth is obtained, improving the traditional shunt-peaking load. As an example, two LNAs for ultra-wideband (UWB), operating for mode I (3.1 to 4.8 GHz), are designed in CMOS 0.35 μm technology. The measured power gain is fairly flat, approximately 10 dB, for frequencies ranging from 3.1 to 5 GHz.||URI:||http://hdl.handle.net/10553/45462||ISSN:||0192-6225||Source:||Microwave Journal[ISSN 0192-6225],v. 53, p. 74-82|
|Appears in Collections:||Artículos|
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