Please use this identifier to cite or link to this item: http://hdl.handle.net/10553/45462
Title: Flatness improvement for a shunt-peaked ultra-wideband low noise amplifier
Authors: García-Vázquez, H. 
Khemchandani, Sunil L. 
Arias-Pérez, J.
Del Pino, J. 
UNESCO Clasification: 3307 Tecnología electrónica
Keywords: Low-noise amplifiers
Gain S21
Noise figure
Issue Date: 2010
Publisher: 0192-6225
Journal: Microwave Journal 
Abstract: A novel configuration to achieve flat gain in wideband low noise amplifiers (LNA) is presented. It consists of a conventional shunt-peaking resistor, decoupled from the cascode stage through a capacitor. A trade-off between the voltage headroom and bandwidth is obtained, improving the traditional shunt-peaking load. As an example, two LNAs for ultra-wideband (UWB), operating for mode I (3.1 to 4.8 GHz), are designed in CMOS 0.35 μm technology. The measured power gain is fairly flat, approximately 10 dB, for frequencies ranging from 3.1 to 5 GHz.
URI: http://hdl.handle.net/10553/45462
ISSN: 0192-6225
Source: Microwave Journal[ISSN 0192-6225],v. 53, p. 74-82
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