Please use this identifier to cite or link to this item:
http://hdl.handle.net/10553/45462
| Title: | Flatness improvement for a shunt-peaked ultra-wideband low noise amplifier | Authors: | García-Vázquez, H. Khemchandani, Sunil L. Arias-Pérez, J. Del Pino, J. |
UNESCO Clasification: | 3307 Tecnología electrónica | Keywords: | Low-noise amplifiers Gain S21 Noise figure |
Issue Date: | 2010 | Publisher: | 0192-6225 | Journal: | Microwave Journal | Abstract: | A novel configuration to achieve flat gain in wideband low noise amplifiers (LNA) is presented. It consists of a conventional shunt-peaking resistor, decoupled from the cascode stage through a capacitor. A trade-off between the voltage headroom and bandwidth is obtained, improving the traditional shunt-peaking load. As an example, two LNAs for ultra-wideband (UWB), operating for mode I (3.1 to 4.8 GHz), are designed in CMOS 0.35 μm technology. The measured power gain is fairly flat, approximately 10 dB, for frequencies ranging from 3.1 to 5 GHz. | URI: | http://hdl.handle.net/10553/45462 | ISSN: | 0192-6225 | Source: | Microwave Journal[ISSN 0192-6225],v. 53, p. 74-82 |
| Appears in Collections: | Artículos |
SCOPUSTM
Citations
2
checked on Mar 30, 2025
WEB OF SCIENCETM
Citations
2
checked on Feb 25, 2024
Page view(s)
59
checked on May 4, 2024
Google ScholarTM
Check
Share
Export metadata
Items in accedaCRIS are protected by copyright, with all rights reserved, unless otherwise indicated.