Please use this identifier to cite or link to this item: http://hdl.handle.net/10553/45454
Title: Using scattering parameters and the gm/ID MOST ratio for characterisation and design of RF circuits
Authors: Castagnola, Juan Luis
Dualibe, Fortunato Carlos
García-Vázquez, Hugo 
UNESCO Clasification: 3307 Tecnología electrónica
Keywords: Scattering parameters
Transistors
Integrated circuit modeling
Circuit stability
Stability analysis
Capacitance
Mathematical model
Issue Date: 2017
Publisher: 1548-3746
Journal: Midwest Symposium on Circuits and Systems 
Abstract: This work presents a design methodology for RF circuits. It is based on the transistor physics, provided by the MOS advanced compact model (ACM) and the scattering parameters, which have been expressed in function of the transconductance-to-current ratio (g m /I D ) of MOS transistors. Since the scattering parameters of the circuits are parameterized by means of the g m /I D ratios of MOST, designers can choose the latter in order to optimise transistor size and bias to comply with the circuit specs, which are normally given in terms of the scattering parameters. As an example, this method has been applied for designing the common source stage of a low noise amplifier (LNA).
URI: http://hdl.handle.net/10553/45454
ISBN: 9781509009169
ISSN: 1548-3746
DOI: 10.1109/MWSCAS.2016.7870068
Source: Midwest Symposium on Circuits and Systems[ISSN 1548-3746] (7870068)
Appears in Collections:Actas de congresos
Show full item record

SCOPUSTM   
Citations

2
checked on Feb 28, 2021

Page view(s)

30
checked on Mar 7, 2021

Google ScholarTM

Check

Altmetric


Share



Export metadata



Items in accedaCRIS are protected by copyright, with all rights reserved, unless otherwise indicated.