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Title: Using scattering parameters and the gm/ID MOST ratio for characterisation and design of RF circuits
Authors: Castagnola, Juan Luis
Dualibe, Fortunato Carlos
García-Vázquez, Hugo 
UNESCO Clasification: 3307 Tecnología electrónica
Keywords: Scattering parameters
Integrated circuit modeling
Circuit stability
Stability analysis, et al
Issue Date: 2017
Publisher: 1548-3746
Journal: Midwest Symposium on Circuits and Systems 
Abstract: This work presents a design methodology for RF circuits. It is based on the transistor physics, provided by the MOS advanced compact model (ACM) and the scattering parameters, which have been expressed in function of the transconductance-to-current ratio (g m /I D ) of MOS transistors. Since the scattering parameters of the circuits are parameterized by means of the g m /I D ratios of MOST, designers can choose the latter in order to optimise transistor size and bias to comply with the circuit specs, which are normally given in terms of the scattering parameters. As an example, this method has been applied for designing the common source stage of a low noise amplifier (LNA).
ISBN: 9781509009169
ISSN: 1548-3746
DOI: 10.1109/MWSCAS.2016.7870068
Source: Midwest Symposium on Circuits and Systems[ISSN 1548-3746] (7870068)
Appears in Collections:Actas de congresos
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