Please use this identifier to cite or link to this item: http://hdl.handle.net/10553/45094
Title: Gallium arsenide MESFET memory architectures
Authors: Lopez, J. F. 
Eshraghian, K.
McGeever, M. K.
Nunez, A. 
Sarmiento, R. 
UNESCO Clasification: 3307 Tecnología electrónica
Keywords: Gallium arsenide
MESFETs
Leakage current
Very large scale integration
FETs
Issue Date: 1995
Journal: Records of the IEEE International Workshop on Memory Technology, Design and Testing
Conference: Records of the 1995 IEEE International Workshop on Memory Technology, Design and Testing 
Abstract: Gallium arsenide (GaAs) technology, because of its high speed, offers an alternative to silicon (Si). For the particular case of digital memories, speed has great importance taking into account that the success of a high-performance microprocessor depends greatly on how fast data are obtained and sent to memory. However, GaAs presents some problems when implementing memories, mainly due to its leaky characteristics and the small output logic swing compared to that produced in MOS devices. In this paper, novel architectures are proposed in order to overcome these problems. As a result, different designs have been implemented for 2- and 5-kbit ROMs, and for a 14-kbit DRAM.
URI: http://hdl.handle.net/10553/45094
Source: Records of the IEEE International Workshop on Memory Technology, Design and Testing, p. 103-108
Appears in Collections:Actas de congresos
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