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Title: Noise margin enhancement in GaAs ROM's using current mode losic
Authors: López Feliciano, José Francisco 
Sarmiento, R. 
Eshraghian, K.
Núñez, A. 
UNESCO Clasification: 3307 Tecnología electrónica
Keywords: Gallium arsenide
Leakage current
FET circuits
Noise levels, et al
Issue Date: 1997
Publisher: 0018-9200
Journal: IEEE Journal of Solid-State Circuits 
Abstract: Two different techniques that allow the implementation of embedded ROMs using a conventional GaAs MESFET technology are presented. The first approach is based on a novel circuit structure named low leakage current FET circuit (L2FC), which reduces significantly subthreshold currents. The second approach is based on pseudo current mode logic (PCML) which is by far the best choice in terms of noise margin levels. This characteristic is found to be the key factor when implementing GaAs ROM's because of its degradation as the number of word lines is increased. A 5-Kb ROM and a 2-Kb ROM were designed giving delays in the order of 2 ns and less than 1 ns, respectively. The results demonstrate the effectiveness of these techniques and their significance toward improving the noise margin.
ISSN: 0018-9200
DOI: 10.1109/4.563683
Source: IEEE Journal of Solid-State Circuits[ISSN 0018-9200],v. 32, p. 592-597
Appears in Collections:Artículos
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