Please use this identifier to cite or link to this item: http://hdl.handle.net/10553/45087
Title: GaAs ICs for 10 Gb/s ATM switching
Authors: Núñez Ordóñez, Antonio 
Sarmiento Rodríguez, Roberto 
Esper-Chaín Falcón, Roberto 
Jakobsen, J.
Montiel- Nelson, Juan A. 
López Feliciano, José 
De Armas Sosa, Valentín 
Tobajas Guerrero, Félix Bernardo 
UNESCO Clasification: 3307 Tecnología electrónica
Keywords: Gallium arsenide
Asynchronous transfer mode
Switches
MESFET integrated circuits
Issue Date: 1997
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Journal: IEEE Gallium Arsenide Integrated Circuit Symposium
Conference: 19th Annual IEEE Gallium Arsenide Integrated Circuit (GaAs IC) Symposium 
Abstract: This paper reports on work done by project GARDEN under EU ESPRIT Research Programme in the past three years for developing ATM line units and ATM switch fabric operating at 2.5 Gb/s, and ongoing work for system upgrading to 10 Gb/s operation. A circuit of each type of unit is presented. This project has required the detailed specification of the system architecture, partitioning, interconnection, and technology mapping of the ATM functions into different chips, the development of full custom layout methodology and tools for MESFET HGaAs III, IV and HEMT technologies, and the actual design, fabrication and test of a set of IC's performing physical layer, ATM layers buffering and switching functions.
URI: http://hdl.handle.net/10553/45087
ISBN: 0-7803-4083-3
ISSN: 1064-7775
DOI: 10.1109/GAAS.1997.628247
Source: IEEE-CAS Region 8 Workshop on Analog and Mixed IC Design, Proceedings, p. 101-104, (Diciembre 1997)
Appears in Collections:Actas de congresos
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