Identificador persistente para citar o vincular este elemento:
http://hdl.handle.net/10553/45087
| Título: | GaAs ICs for 10 Gb/s ATM switching | Autores/as: | Núñez Ordóñez, Antonio Sarmiento Rodríguez, Roberto Esper-Chaín Falcón, Roberto Jakobsen, J. Montiel- Nelson, Juan A. López Feliciano, José De Armas Sosa, Valentín Tobajas Guerrero, Félix Bernardo |
Clasificación UNESCO: | 3307 Tecnología electrónica | Palabras clave: | Gallium arsenide Asynchronous transfer mode Switches MESFET integrated circuits |
Fecha de publicación: | 1997 | Editor/a: | Institute of Electrical and Electronics Engineers (IEEE) | Publicación seriada: | IEEE Gallium Arsenide Integrated Circuit Symposium | Conferencia: | 19th Annual IEEE Gallium Arsenide Integrated Circuit (GaAs IC) Symposium | Resumen: | This paper reports on work done by project GARDEN under EU ESPRIT Research Programme in the past three years for developing ATM line units and ATM switch fabric operating at 2.5 Gb/s, and ongoing work for system upgrading to 10 Gb/s operation. A circuit of each type of unit is presented. This project has required the detailed specification of the system architecture, partitioning, interconnection, and technology mapping of the ATM functions into different chips, the development of full custom layout methodology and tools for MESFET HGaAs III, IV and HEMT technologies, and the actual design, fabrication and test of a set of IC's performing physical layer, ATM layers buffering and switching functions. | URI: | http://hdl.handle.net/10553/45087 | ISBN: | 0-7803-4083-3 | ISSN: | 1064-7775 | DOI: | 10.1109/GAAS.1997.628247 | Fuente: | IEEE-CAS Region 8 Workshop on Analog and Mixed IC Design, Proceedings, p. 101-104, (Diciembre 1997) |
| Colección: | Actas de congresos |
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