Identificador persistente para citar o vincular este elemento: http://hdl.handle.net/10553/45087
Título: GaAs ICs for 10 Gb/s ATM switching
Autores/as: Núñez Ordóñez, Antonio
Sarmiento Rodríguez, Roberto
Esper-Chaín Falcón, Roberto
Jakobsen, J.
Montiel- Nelson, Juan A.
López Feliciano, José
De Armas Sosa, Valentín
Tobajas Guerrero, Félix Bernardo
Clasificación UNESCO: 3307 Tecnología electrónica
Palabras clave: Gallium arsenide
Asynchronous transfer mode
Switches
MESFET integrated circuits
Fecha de publicación: 1997
Editor/a: Institute of Electrical and Electronics Engineers (IEEE) 
Publicación seriada: IEEE Gallium Arsenide Integrated Circuit Symposium
Conferencia: 19th Annual IEEE Gallium Arsenide Integrated Circuit (GaAs IC) Symposium 
Resumen: This paper reports on work done by project GARDEN under EU ESPRIT Research Programme in the past three years for developing ATM line units and ATM switch fabric operating at 2.5 Gb/s, and ongoing work for system upgrading to 10 Gb/s operation. A circuit of each type of unit is presented. This project has required the detailed specification of the system architecture, partitioning, interconnection, and technology mapping of the ATM functions into different chips, the development of full custom layout methodology and tools for MESFET HGaAs III, IV and HEMT technologies, and the actual design, fabrication and test of a set of IC's performing physical layer, ATM layers buffering and switching functions.
URI: http://hdl.handle.net/10553/45087
ISBN: 0-7803-4083-3
ISSN: 1064-7775
DOI: 10.1109/GAAS.1997.628247
Fuente: IEEE-CAS Region 8 Workshop on Analog and Mixed IC Design, Proceedings, p. 101-104, (Diciembre 1997)
Colección:Actas de congresos
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