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Please use this identifier to cite or link to this item: http://hdl.handle.net/10553/44320
DC FieldValueLanguage
dc.contributor.authorMonzón-Verona, José Miguelen_US
dc.contributor.authorGonzález Domínguez, Pabloen_US
dc.contributor.authorGarcia-Alonso Montoya, Santiagoen_US
dc.date.accessioned2018-11-21T22:00:58Z-
dc.date.available2018-11-21T22:00:58Z-
dc.date.issued2018en_US
dc.identifier.issn1424-8220en_US
dc.identifier.otherWoS-
dc.identifier.urihttp://hdl.handle.net/10553/44320-
dc.description.abstractIn this work, we have obtained a new constitutive matrix to calculate the induced Lorentz electric current of in a conductive disk in movement within a magnetic field using the cell method in 3D. This disk and a permanent magnet act as a magnetic brake. The results obtained are compared with those obtained with the finite element method (FEM) using the computer applications Getdp and femm. The error observed is less than 0.1173%. Likewise, a second verification has been made in the laboratory using Hall sensors to measure the magnetic field in the proximity of the magnetic brake.en_US
dc.languageengen_US
dc.relation.ispartofSensorsen_US
dc.sourceSensors (Switzerland)[ISSN 1424-8220], v. 18 (10), 3185en_US
dc.subject3313 Tecnología e ingeniería mecánicasen_US
dc.subject.otherVell methoden_US
dc.subject.otherLorentz electric fielden_US
dc.subject.otherHall sensorsen_US
dc.subject.otherMagnetic brakeen_US
dc.titleNew constitutive matrix in the 3D cell method to obtain a lorentz electric field in a magnetic brakeen_US
dc.typeinfo:eu-repo/semantics/articleen_US
dc.typeArticleen_US
dc.identifier.doi10.3390/s18103185en_US
dc.identifier.scopus85053857067-
dc.identifier.isi000448661500013-
dc.contributor.authorscopusid26531597500-
dc.contributor.authorscopusid57203973366-
dc.contributor.authorscopusid35106946100-
dc.identifier.issue3185-
dc.relation.volume18en_US
dc.investigacionIngeniería y Arquitecturaen_US
dc.type2Artículoen_US
dc.contributor.daisngid5659103-
dc.contributor.daisngid29126516-
dc.contributor.daisngid3654087-
dc.description.numberofpages15en_US
dc.utils.revisionSíen_US
dc.contributor.wosstandardWOS:Monzon-Verona, JM-
dc.contributor.wosstandardWOS:Gonzalez-Dominguez, PI-
dc.contributor.wosstandardWOS:Garcia-Alonso, S-
dc.date.coverdateOctubre 2018en_US
dc.identifier.ulpgcSíes
dc.description.sjr0,592
dc.description.jcr3,031
dc.description.sjrqQ2
dc.description.jcrqQ2
dc.description.scieSCIE
item.grantfulltextopen-
item.fulltextCon texto completo-
crisitem.author.deptGIR IUMA: Instrumentación avanzada-
crisitem.author.deptIU de Microelectrónica Aplicada-
crisitem.author.deptDepartamento de Ingeniería Eléctrica-
crisitem.author.deptGIR IUMA: Instrumentación avanzada-
crisitem.author.deptIU de Microelectrónica Aplicada-
crisitem.author.deptDepartamento de Ingeniería Eléctrica-
crisitem.author.deptGIR IUMA: Instrumentación avanzada-
crisitem.author.deptIU de Microelectrónica Aplicada-
crisitem.author.deptDepartamento de Ingeniería Electrónica y Automática-
crisitem.author.orcid0000-0001-9694-269X-
crisitem.author.orcid0000-0003-4389-0632-
crisitem.author.parentorgIU de Microelectrónica Aplicada-
crisitem.author.parentorgIU de Microelectrónica Aplicada-
crisitem.author.parentorgIU de Microelectrónica Aplicada-
crisitem.author.fullNameMonzón Verona, José Miguel-
crisitem.author.fullNameGonzález Domínguez, Pablo-
crisitem.author.fullNameGarcia-Alonso Montoya, Santiago-
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