Please use this identifier to cite or link to this item: http://hdl.handle.net/10553/43594
DC FieldValueLanguage
dc.contributor.authorMarrero-Martín, M.en_US
dc.contributor.authorSzydzik, T.en_US
dc.contributor.authorGarcía, J.en_US
dc.contributor.authorGonzález, B.en_US
dc.contributor.authorHernández Ballester, Antonioen_US
dc.contributor.otherGarcia Garcia, Javier-
dc.contributor.otherMarrero-Martin, Margarita-
dc.date.accessioned2018-11-21T16:23:44Z-
dc.date.available2018-11-21T16:23:44Z-
dc.date.issued2011en_US
dc.identifier.isbn9780819486561en_US
dc.identifier.issn0277-786Xen_US
dc.identifier.urihttp://hdl.handle.net/10553/43594-
dc.description.abstractVariable capacitors, the varactors, are key components in many types of radiofrequency circuits and thus high quality varactors are essential to achieve high quality factors in these devices. This work presents results of a study on the variation of tuning range and quality factor when varying the depth and separation of N+ diffusions in a PN junction varactor with fixed number of cells. For test needs four types of cells, varying the geometry of N+ and P+ diffusions were designed. The varactors were formed by horizontally and vertically overlapping cells. Based on their implementation structure, the varactors were divided into two groups, each comprising 4 varactors. The varactors belonging to the first group have all N+ diffusions connected to the buried layer. Varactors from the second group use floating N+ diffusions and a buried N+ diffusion to separate pairs formed by two adjacent cells. Post implementation measurements show that the area of varactors from in the first and second group is 1795.74 μm2(51.9 × 34.6) and 1288.92 μm2 (46.7 × 27.6), respectively. The varactors from the 1st group have a high tuning range, whereas the ones from the 2nd group high quality factors and require less area. © 2011 SPIE.-
dc.languageengen_US
dc.publisher0277-786Xen_US
dc.relation.ispartofProceedings of SPIE - The International Society for Optical Engineeringen_US
dc.sourceProceedings of SPIE - The International Society for Optical Engineering[ISSN 0277-786X],v. 8067 (80670T)en_US
dc.subject3307 Tecnología electrónica-
dc.titleEffect of separation and depth of N+ diffusions in the quality factor and tuning range of PN varactorsen_US
dc.typeinfo:eu-repo/semantics/conferenceObjecten_US
dc.typeConferenceObjecten_US
dc.relation.conferenceConference on VLSI Circuits and Systems Ven_US
dc.identifier.doi10.1117/12.888663en_US
dc.identifier.scopus79958043496-
dc.identifier.isi000292763900026-
dcterms.isPartOfVlsi Circuits And Systems V-
dcterms.sourceVlsi Circuits And Systems V[ISSN 0277-786X],v. 8067-
dc.contributor.authorscopusid23005327400-
dc.contributor.authorscopusid39262669300-
dc.contributor.authorscopusid8383160900-
dc.contributor.authorscopusid56082155300-
dc.contributor.authorscopusid57194681887-
dc.identifier.issue80670T-
dc.relation.volume8067en_US
dc.investigacionIngeniería y Arquitectura-
dc.type2Actas de congresosen_US
dc.identifier.wosWOS:000292763900026-
dc.contributor.daisngid4299279-
dc.contributor.daisngid5545091-
dc.contributor.daisngid1774718-
dc.contributor.daisngid1092737-
dc.contributor.daisngid2061817-
dc.identifier.investigatorRIDI-8093-2015-
dc.identifier.investigatorRIDNo ID-
dc.contributor.wosstandardWOS:Marrero-Martin, M-
dc.contributor.wosstandardWOS:Szydzik, T-
dc.contributor.wosstandardWOS:Garcia, J-
dc.contributor.wosstandardWOS:Gonzalez, B-
dc.contributor.wosstandardWOS:Hernandez, A-
dc.date.coverdateJunio 2011en_US
dc.identifier.conferenceidevents121406-
dc.identifier.conferenceidevents120763-
dc.identifier.ulpgc-
dc.contributor.buulpgcBU-TELen_US
item.grantfulltextopen-
item.fulltextCon texto completo-
crisitem.event.eventsstartdate18-04-2011-
crisitem.event.eventsenddate20-04-2011-
crisitem.author.deptGIR IUMA: Sistemas de Información y Comunicaciones-
crisitem.author.deptIU de Microelectrónica Aplicada-
crisitem.author.deptDepartamento de Ingeniería Electrónica y Automática-
crisitem.author.deptGIR IUMA: Sistemas de Información y Comunicaciones-
crisitem.author.deptIU de Microelectrónica Aplicada-
crisitem.author.deptDepartamento de Ingeniería Electrónica y Automática-
crisitem.author.deptGIR IUMA: Tecnología Microelectrónica-
crisitem.author.deptIU de Microelectrónica Aplicada-
crisitem.author.deptDepartamento de Ingeniería Electrónica y Automática-
crisitem.author.deptGIR IUMA: Sistemas de Información y Comunicaciones-
crisitem.author.deptIU de Microelectrónica Aplicada-
crisitem.author.deptDepartamento de Ingeniería Electrónica y Automática-
crisitem.author.orcid0000-0002-0861-9954-
crisitem.author.orcid0000-0003-3561-0135-
crisitem.author.orcid0000-0001-6864-9736-
crisitem.author.parentorgIU de Microelectrónica Aplicada-
crisitem.author.parentorgIU de Microelectrónica Aplicada-
crisitem.author.parentorgIU de Microelectrónica Aplicada-
crisitem.author.parentorgIU de Microelectrónica Aplicada-
crisitem.author.fullNameMarrero Martín, Margarita Luisa-
crisitem.author.fullNameSzydzik, Tomasz-
crisitem.author.fullNameGarcía García, Javier Agustín-
crisitem.author.fullNameGonzález Pérez, Benito-
crisitem.author.fullNameHernández Ballester, Antonio-
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