Please use this identifier to cite or link to this item:
http://hdl.handle.net/10553/43594
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Marrero-Martín, M. | en_US |
dc.contributor.author | Szydzik, T. | en_US |
dc.contributor.author | García, J. | en_US |
dc.contributor.author | González, B. | en_US |
dc.contributor.author | Hernández Ballester, Antonio | en_US |
dc.contributor.other | Garcia Garcia, Javier | - |
dc.contributor.other | Marrero-Martin, Margarita | - |
dc.date.accessioned | 2018-11-21T16:23:44Z | - |
dc.date.available | 2018-11-21T16:23:44Z | - |
dc.date.issued | 2011 | en_US |
dc.identifier.isbn | 9780819486561 | en_US |
dc.identifier.issn | 0277-786X | en_US |
dc.identifier.uri | http://hdl.handle.net/10553/43594 | - |
dc.description.abstract | Variable capacitors, the varactors, are key components in many types of radiofrequency circuits and thus high quality varactors are essential to achieve high quality factors in these devices. This work presents results of a study on the variation of tuning range and quality factor when varying the depth and separation of N+ diffusions in a PN junction varactor with fixed number of cells. For test needs four types of cells, varying the geometry of N+ and P+ diffusions were designed. The varactors were formed by horizontally and vertically overlapping cells. Based on their implementation structure, the varactors were divided into two groups, each comprising 4 varactors. The varactors belonging to the first group have all N+ diffusions connected to the buried layer. Varactors from the second group use floating N+ diffusions and a buried N+ diffusion to separate pairs formed by two adjacent cells. Post implementation measurements show that the area of varactors from in the first and second group is 1795.74 μm2(51.9 × 34.6) and 1288.92 μm2 (46.7 × 27.6), respectively. The varactors from the 1st group have a high tuning range, whereas the ones from the 2nd group high quality factors and require less area. © 2011 SPIE. | - |
dc.language | eng | en_US |
dc.publisher | 0277-786X | en_US |
dc.relation.ispartof | Proceedings of SPIE - The International Society for Optical Engineering | en_US |
dc.source | Proceedings of SPIE - The International Society for Optical Engineering[ISSN 0277-786X],v. 8067 (80670T) | en_US |
dc.subject | 3307 Tecnología electrónica | - |
dc.title | Effect of separation and depth of N+ diffusions in the quality factor and tuning range of PN varactors | en_US |
dc.type | info:eu-repo/semantics/conferenceObject | en_US |
dc.type | ConferenceObject | en_US |
dc.relation.conference | Conference on VLSI Circuits and Systems V | en_US |
dc.identifier.doi | 10.1117/12.888663 | en_US |
dc.identifier.scopus | 79958043496 | - |
dc.identifier.isi | 000292763900026 | - |
dcterms.isPartOf | Vlsi Circuits And Systems V | - |
dcterms.source | Vlsi Circuits And Systems V[ISSN 0277-786X],v. 8067 | - |
dc.contributor.authorscopusid | 23005327400 | - |
dc.contributor.authorscopusid | 39262669300 | - |
dc.contributor.authorscopusid | 8383160900 | - |
dc.contributor.authorscopusid | 56082155300 | - |
dc.contributor.authorscopusid | 57194681887 | - |
dc.identifier.issue | 80670T | - |
dc.relation.volume | 8067 | en_US |
dc.investigacion | Ingeniería y Arquitectura | - |
dc.type2 | Actas de congresos | en_US |
dc.identifier.wos | WOS:000292763900026 | - |
dc.contributor.daisngid | 4299279 | - |
dc.contributor.daisngid | 5545091 | - |
dc.contributor.daisngid | 1774718 | - |
dc.contributor.daisngid | 1092737 | - |
dc.contributor.daisngid | 2061817 | - |
dc.identifier.investigatorRID | I-8093-2015 | - |
dc.identifier.investigatorRID | No ID | - |
dc.contributor.wosstandard | WOS:Marrero-Martin, M | - |
dc.contributor.wosstandard | WOS:Szydzik, T | - |
dc.contributor.wosstandard | WOS:Garcia, J | - |
dc.contributor.wosstandard | WOS:Gonzalez, B | - |
dc.contributor.wosstandard | WOS:Hernandez, A | - |
dc.date.coverdate | Junio 2011 | en_US |
dc.identifier.conferenceid | events121406 | - |
dc.identifier.conferenceid | events120763 | - |
dc.identifier.ulpgc | Sí | - |
dc.contributor.buulpgc | BU-TEL | en_US |
item.grantfulltext | open | - |
item.fulltext | Con texto completo | - |
crisitem.author.dept | GIR IUMA: Equipos y Sistemas de Comunicación | - |
crisitem.author.dept | IU de Microelectrónica Aplicada | - |
crisitem.author.dept | Departamento de Ingeniería Electrónica y Automática | - |
crisitem.author.dept | GIR IUMA: Sistemas de Información y Comunicaciones | - |
crisitem.author.dept | IU de Microelectrónica Aplicada | - |
crisitem.author.dept | Departamento de Ingeniería Electrónica y Automática | - |
crisitem.author.dept | GIR IUMA: Tecnología Microelectrónica | - |
crisitem.author.dept | IU de Microelectrónica Aplicada | - |
crisitem.author.dept | Departamento de Ingeniería Electrónica y Automática | - |
crisitem.author.dept | GIR IUMA: Sistemas de Información y Comunicaciones | - |
crisitem.author.dept | IU de Microelectrónica Aplicada | - |
crisitem.author.dept | Departamento de Ingeniería Electrónica y Automática | - |
crisitem.author.orcid | 0000-0002-0861-9954 | - |
crisitem.author.orcid | 0000-0003-3561-0135 | - |
crisitem.author.orcid | 0000-0001-6864-9736 | - |
crisitem.author.parentorg | IU de Microelectrónica Aplicada | - |
crisitem.author.parentorg | IU de Microelectrónica Aplicada | - |
crisitem.author.parentorg | IU de Microelectrónica Aplicada | - |
crisitem.author.parentorg | IU de Microelectrónica Aplicada | - |
crisitem.author.fullName | Marrero Martín, Margarita Luisa | - |
crisitem.author.fullName | Szydzik, Tomasz | - |
crisitem.author.fullName | García García, Javier Agustín | - |
crisitem.author.fullName | González Pérez, Benito | - |
crisitem.author.fullName | Hernández Ballester, Antonio | - |
Appears in Collections: | Actas de congresos |
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