Please use this identifier to cite or link to this item: http://hdl.handle.net/10553/113103
DC FieldValueLanguage
dc.contributor.authorDorta-Naranjo, B. Pabloen_US
dc.contributor.authorSalazar, M.en_US
dc.contributor.authorCasao, J. A.en_US
dc.contributor.authorCáceres, J. L.en_US
dc.contributor.authorPérez, J.en_US
dc.date.accessioned2021-12-23T14:19:15Z-
dc.date.available2021-12-23T14:19:15Z-
dc.date.issued1992en_US
dc.identifier.urihttp://hdl.handle.net/10553/113103-
dc.languageengen_US
dc.publisherEuropean Space Research and Technology Center (ESTEC)en_US
dc.publisherEuropean Space Agency (ESA)en_US
dc.sourceProceedings of GAAS. European Gallium Arsenide and Related III-V Compounds Applications Symposiumen_US
dc.subject3325 Tecnología de las telecomunicacionesen_US
dc.titleTest set-ups for fast measurement of monolithic integrated circuits from on-wafer to system. Application to a novel GaAs monolithic transimpedance amplifier for high speed optical communication systemsen_US
dc.typeinfo:eu-repo/semantics/conferenceobjecten_US
dc.typeConferenceObjecten_US
dc.relation.conferenceEuropean Gallium Arsenide and Related III-V Compounds Applications Symposium (GaAs 1992)en_US
dc.investigacionIngeniería y Arquitecturaen_US
dc.type2Actas de congresosen_US
dc.description.numberofpages6en_US
dc.utils.revisionen_US
dc.date.coverdate04/1992en_US
dc.identifier.ulpgcen_US
dc.contributor.buulpgcBU-TELen_US
item.grantfulltextopen-
item.fulltextCon texto completo-
crisitem.author.deptGIR IDeTIC: División de Ingeniería de Comunicaciones-
crisitem.author.deptIU para el Desarrollo Tecnológico y la Innovación-
crisitem.author.deptDepartamento de Señales y Comunicaciones-
crisitem.author.orcid0000-0002-9994-0646-
crisitem.author.parentorgIU para el Desarrollo Tecnológico y la Innovación-
crisitem.author.fullNameDorta Naranjo, Blas Pablo-
crisitem.event.eventsstartdate27-04-1992-
crisitem.event.eventsenddate29-04-1992-
Appears in Collections:Actas de congresos
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