Please use this identifier to cite or link to this item:
http://hdl.handle.net/10553/63419
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Díez Acereda, Victoria You | en_US |
dc.contributor.author | Lalchand Khemchandani, Sunil | en_US |
dc.contributor.author | Del Pino Suárez, Francisco Javier | en_US |
dc.contributor.author | Mateos Angulo, Sergio | en_US |
dc.date.accessioned | 2020-01-22T10:10:07Z | - |
dc.date.available | 2020-01-22T10:10:07Z | - |
dc.date.issued | 2019 | en_US |
dc.identifier.isbn | 978-3-03921-279-8 | - |
dc.identifier.issn | 2079-9292 | en_US |
dc.identifier.other | WoS | - |
dc.identifier.uri | http://hdl.handle.net/10553/63419 | - |
dc.description.abstract | This paper presents a thorough study of radiation effects on a frequency synthesizer designed in a 0.18 mu m CMOS technology. In CMOS devices, the effect of a high energy particle impact can be modeled by a current pulse connected to the drain of the transistors. The effects of SET (single event transient) and SEU (single event upset) were analyzed connecting current pulses to the drains of all the transistors and analyzing the amplitude variations and phase shifts obtained at the output nodes. Following this procedure, the most sensitive circuits were detected. This paper proposes a combination of radiation hardening-by-design techniques (RHBD) such as resistor-capacitor (RC) filtering or local circuit-redundancy to mitigate the effects of radiation. The proposed modifications make the frequency synthesizer more robust against radiation. | en_US |
dc.language | eng | en_US |
dc.publisher | MDPI | - |
dc.relation | Diseño de Circuitos de Comunicaciones Para Alta Radiacion Ambiental | en_US |
dc.relation | Diseño de Amplificadores de Potencia Integrados de Nitruro de Galio Para Comunicaciones | en_US |
dc.relation | Exploring Modern Integrated Circuits Design in Harsh Environments. | en_US |
dc.relation.ispartof | Electronics (Switzerland) | en_US |
dc.source | Electronics [ISSN 2079-9292], v. 8 (6), 690, (Junio 2019) | en_US |
dc.subject | 3307 Tecnología electrónica | en_US |
dc.subject.other | CMOS technology | en_US |
dc.subject.other | Radiation effects | en_US |
dc.subject.other | Single event transient | en_US |
dc.subject.other | Single event upset | en_US |
dc.title | RHBD Techniques to Mitigate SEU and SET in CMOS Frequency Synthesizers | en_US |
dc.type | info:eu-repo/semantics/Article | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.3390/electronics8060690 | en_US |
dc.identifier.scopus | 85069700314 | - |
dc.identifier.isi | 000475354700096 | - |
dc.identifier.isi | WOS:000475354700096 | - |
dc.contributor.orcid | #NODATA# | - |
dc.contributor.orcid | #NODATA# | - |
dc.contributor.orcid | #NODATA# | - |
dc.contributor.orcid | #NODATA# | - |
dc.contributor.authorscopusid | 57210431986 | - |
dc.contributor.authorscopusid | 9639770800 | - |
dc.contributor.authorscopusid | 56740582700 | - |
dc.contributor.authorscopusid | 57188853360 | - |
dc.identifier.issue | 6 | - |
dc.relation.volume | 8 | en_US |
dc.investigacion | Ingeniería y Arquitectura | en_US |
dc.type2 | Artículo | en_US |
local.message.claim | 2022-10-17T10:18:55.039+0100|||rp02883|||submit_approve|||dc_contributor_author|||None | * |
dc.contributor.daisngid | 31019489 | - |
dc.contributor.daisngid | 1425987 | - |
dc.contributor.daisngid | 34938967 | - |
dc.contributor.daisngid | 8613440 | - |
dc.utils.revision | Sí | en_US |
dc.contributor.wosstandard | WOS:Diez-Acereda, V | - |
dc.contributor.wosstandard | WOS:Khemchandani, SL | - |
dc.contributor.wosstandard | WOS:del Pino, J | - |
dc.contributor.wosstandard | WOS:Mateos-Angulo, S | - |
dc.date.coverdate | Junio 2019 | en_US |
dc.identifier.ulpgc | Sí | en_US |
dc.contributor.buulpgc | BU-TEL | en_US |
dc.description.sjr | 0,303 | - |
dc.description.jcr | 2,412 | - |
dc.description.sjrq | Q2 | - |
dc.description.jcrq | Q2 | - |
dc.description.scie | SCIE | - |
item.fulltext | Con texto completo | - |
item.grantfulltext | restricted | - |
crisitem.project.principalinvestigator | Del Pino Suárez, Francisco Javier | - |
crisitem.project.principalinvestigator | Khemchandani Lalchand, Sunil | - |
crisitem.project.principalinvestigator | Del Pino Suárez, Francisco Javier | - |
crisitem.author.dept | GIR IUMA: Tecnología Microelectrónica | - |
crisitem.author.dept | IU de Microelectrónica Aplicada | - |
crisitem.author.dept | GIR IUMA: Tecnología Microelectrónica | - |
crisitem.author.dept | IU de Microelectrónica Aplicada | - |
crisitem.author.dept | Departamento de Ingeniería Electrónica y Automática | - |
crisitem.author.dept | GIR IUMA: Tecnología Microelectrónica | - |
crisitem.author.dept | IU de Microelectrónica Aplicada | - |
crisitem.author.dept | Departamento de Ingeniería Electrónica y Automática | - |
crisitem.author.orcid | 0000-0003-0315-4622 | - |
crisitem.author.orcid | 0000-0003-0087-2370 | - |
crisitem.author.orcid | 0000-0003-2610-883X | - |
crisitem.author.parentorg | IU de Microelectrónica Aplicada | - |
crisitem.author.parentorg | IU de Microelectrónica Aplicada | - |
crisitem.author.parentorg | IU de Microelectrónica Aplicada | - |
crisitem.author.fullName | Díez Acereda, Victoria You | - |
crisitem.author.fullName | Khemchandani Lalchand, Sunil | - |
crisitem.author.fullName | Del Pino Suárez, Francisco Javier | - |
crisitem.author.fullName | Mateos Angulo, Sergio | - |
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