Please use this identifier to cite or link to this item: http://hdl.handle.net/10553/55432
Title: A Ku-Band SSB Subharmonically Pumped Mixerdesigned using a 100nm GaN-on-Si process
Authors: San Miguel Montesdeoca, Mario
Mayor Duarte, Daniel
Mateos Angulo, Sergio
Khemchandani, S. L. 
Del Pino, J. 
Keywords: 3307 Tecnología electrónica
metadata.dc.subject.other: IQ mixer
Ku-band
MMIC
GaN
OMMIC
SSB mixers
SHP mixers
Quasi-lumped stubs
Layout
Issue Date: 2018
Abstract: This paper presents a Ku-band single-sideband mixer (SSB). The design is based on subharmonically pumped IQ mixers (SHP), designed using a GaN on Silicon process of the French foundry OMMIC. The mixer uses an in-phase Wilkinson divider for the LO, two SHP mixers implemented using antiparallel diode pairs (APDPs) and a 90° combiner for the RF signal. To minimise the area of the circuits, the quasi-lumped technique was applied to the design. The mixer was designed to provide an output RF frequency range between 13.75-14.5 GHz. The mixer occupies an area of 2268μm x 1408μm, with a conversion loss of 21.18 dB and a sideband rejection of 29.32 dBc.
URI: http://hdl.handle.net/10553/55432
Source: XXXIII Conference on Design of Circuits and Integrated Systems (DCIS). Oral. 14-16 de noviembre de 2018, Lyon.
Appears in Collections:Actas de Congresos

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