1. accedaCRIS
  2. Publicaciones
  3. Artículos
Please use this identifier to cite or link to this item: http://hdl.handle.net/10553/54682
DC FieldValueLanguage
dc.contributor.authorSuárez, José P.en_US
dc.contributor.authorMoreno, Taniaen_US
dc.contributor.authorPlaza, Ángelen_US
dc.contributor.authorAbad, Pilaren_US
dc.contributor.otherSuarez, Jose Pablo-
dc.contributor.otherPLAZA, ANGEL-
dc.date.accessioned2019-02-18T12:29:27Z-
dc.date.available2019-02-18T12:29:27Z-
dc.date.issued2013en_US
dc.identifier.issn0096-3003en_US
dc.identifier.urihttp://hdl.handle.net/10553/54682-
dc.description.abstractIn this work we study the diameters reduction rate for the iterative application of the longest edge (LE) n-section of triangles for n⩾4. The maximum diameter dkn of all triangles generated at the kth iteration of the LE n-section is closely connected with the properties of the triangular mesh generated by this refinement scheme. The upper and the lower bounds for dk2 were proved by Kearfott in [9] and for dk3 by Plaza et al. [12]. Here, we derive the two-sided estimates for dkn with n⩾4.en_US
dc.languageengen_US
dc.relation.ispartofApplied Mathematics and Computationen_US
dc.sourceApplied Mathematics and Computation [ISSN 0096-3003], v. 224, p. 492-500, (Octubre 2013)en_US
dc.subject120603 Análisis de erroresen_US
dc.subject.otherTriangular meshen_US
dc.subject.otherLongest edgeen_US
dc.subject.otherMesh refinementen_US
dc.titleTwo-sided estimation of diameters reduction rate for the longest edge n-section of triangles with n ≥ 4en_US
dc.typeinfo:eu-repo/semantics/Articleen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.amc.2013.08.041en_US
dc.identifier.scopus84885092476-
dc.identifier.isi000327734800046-
dcterms.isPartOfApplied Mathematics And Computation-
dcterms.sourceApplied Mathematics And Computation[ISSN 0096-3003],v. 224, p. 492-500-
dc.contributor.authorscopusid7202040282-
dc.contributor.authorscopusid55213116800-
dc.contributor.authorscopusid7006613647-
dc.contributor.authorscopusid57196535626-
dc.description.lastpage500en_US
dc.description.firstpage492en_US
dc.relation.volume224en_US
dc.investigacionIngeniería y Arquitecturaen_US
dc.type2Artículoen_US
dc.identifier.wosWOS:000327734800046-
dc.contributor.daisngid1080382-
dc.contributor.daisngid7583609-
dc.contributor.daisngid259483-
dc.contributor.daisngid1500747-
dc.identifier.investigatorRIDC-1092-2012-
dc.identifier.investigatorRIDA-8210-2008-
dc.identifier.externalWOS:000327734800046-
dc.utils.revisionSíen_US
dc.date.coverdateOctubre 2013en_US
dc.identifier.ulpgcSíen_US
dc.contributor.buulpgcBU-INFen_US
dc.description.sjr1,143
dc.description.jcr1,6
dc.description.sjrqQ1
dc.description.jcrqQ1
dc.description.scieSCIE
item.fulltextSin texto completo-
item.grantfulltextnone-
crisitem.author.deptGIR IUMA: Matemáticas, Gráficos y Computación-
crisitem.author.deptIU de Microelectrónica Aplicada-
crisitem.author.deptDepartamento de Cartografía y Expresión Gráfica en La Ingeniería-
crisitem.author.deptGIR IUMA: Matemáticas, Gráficos y Computación-
crisitem.author.deptIU de Microelectrónica Aplicada-
crisitem.author.deptDepartamento de Matemáticas-
crisitem.author.deptDepartamento de Cartografía y Expresión Gráfica en La Ingeniería-
crisitem.author.orcid0000-0001-8140-9008-
crisitem.author.orcid0000-0002-5077-6531-
crisitem.author.parentorgIU de Microelectrónica Aplicada-
crisitem.author.parentorgIU de Microelectrónica Aplicada-
crisitem.author.fullNameSuárez Rivero, José Pablo-
crisitem.author.fullNamePlaza De La Hoz, Ángel-
crisitem.author.fullNameAbad Real, María Pilar-
Appears in Collections:Artículos
Show simple item record

SCOPUSTM   
Citations

1
checked on Mar 30, 2025

WEB OF SCIENCETM
Citations

1
checked on Mar 30, 2025

Page view(s)

81
checked on Feb 24, 2024

Google ScholarTM

Check

Altmetric


Share


Export metadata


Items in accedaCRIS are protected by copyright, with all rights reserved, unless otherwise indicated.