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Identificador persistente para citar o vincular este elemento: http://hdl.handle.net/10553/54682
DC FieldValueLanguage
dc.contributor.authorSuárez, José P.en_US
dc.contributor.authorMoreno, Taniaen_US
dc.contributor.authorPlaza, Ángelen_US
dc.contributor.authorAbad, Pilaren_US
dc.contributor.otherSuarez, Jose Pablo-
dc.contributor.otherPLAZA, ANGEL-
dc.date.accessioned2019-02-18T12:29:27Z-
dc.date.available2019-02-18T12:29:27Z-
dc.date.issued2013en_US
dc.identifier.issn0096-3003en_US
dc.identifier.urihttp://hdl.handle.net/10553/54682-
dc.description.abstractIn this work we study the diameters reduction rate for the iterative application of the longest edge (LE) n-section of triangles for n⩾4. The maximum diameter dkn of all triangles generated at the kth iteration of the LE n-section is closely connected with the properties of the triangular mesh generated by this refinement scheme. The upper and the lower bounds for dk2 were proved by Kearfott in [9] and for dk3 by Plaza et al. [12]. Here, we derive the two-sided estimates for dkn with n⩾4.en_US
dc.languageengen_US
dc.relation.ispartofApplied Mathematics and Computationen_US
dc.sourceApplied Mathematics and Computation [ISSN 0096-3003], v. 224, p. 492-500, (Octubre 2013)en_US
dc.subject120603 Análisis de erroresen_US
dc.subject.otherTriangular meshen_US
dc.subject.otherLongest edgeen_US
dc.subject.otherMesh refinementen_US
dc.titleTwo-sided estimation of diameters reduction rate for the longest edge n-section of triangles with n ≥ 4en_US
dc.typeinfo:eu-repo/semantics/Articleen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.amc.2013.08.041en_US
dc.identifier.scopus84885092476-
dc.identifier.isi000327734800046-
dcterms.isPartOfApplied Mathematics And Computation-
dcterms.sourceApplied Mathematics And Computation[ISSN 0096-3003],v. 224, p. 492-500-
dc.contributor.authorscopusid7202040282-
dc.contributor.authorscopusid55213116800-
dc.contributor.authorscopusid7006613647-
dc.contributor.authorscopusid57196535626-
dc.description.lastpage500en_US
dc.description.firstpage492en_US
dc.relation.volume224en_US
dc.investigacionIngeniería y Arquitecturaen_US
dc.type2Artículoen_US
dc.identifier.wosWOS:000327734800046-
dc.contributor.daisngid1080382-
dc.contributor.daisngid7583609-
dc.contributor.daisngid259483-
dc.contributor.daisngid1500747-
dc.identifier.investigatorRIDC-1092-2012-
dc.identifier.investigatorRIDA-8210-2008-
dc.identifier.externalWOS:000327734800046-
dc.utils.revisionSíen_US
dc.date.coverdateOctubre 2013en_US
dc.identifier.ulpgcSíen_US
dc.contributor.buulpgcBU-INFen_US
dc.description.sjr1,143
dc.description.jcr1,6
dc.description.sjrqQ1
dc.description.jcrqQ1
dc.description.scieSCIE
item.grantfulltextnone-
item.fulltextSin texto completo-
crisitem.author.deptGIR IUMA: Matemáticas, Gráficos y Computación-
crisitem.author.deptIU de Microelectrónica Aplicada-
crisitem.author.deptDepartamento de Cartografía y Expresión Gráfica en La Ingeniería-
crisitem.author.deptGIR IUMA: Matemáticas, Gráficos y Computación-
crisitem.author.deptIU de Microelectrónica Aplicada-
crisitem.author.deptDepartamento de Matemáticas-
crisitem.author.deptDepartamento de Cartografía y Expresión Gráfica en La Ingeniería-
crisitem.author.orcid0000-0001-8140-9008-
crisitem.author.orcid0000-0002-5077-6531-
crisitem.author.parentorgIU de Microelectrónica Aplicada-
crisitem.author.parentorgIU de Microelectrónica Aplicada-
crisitem.author.fullNameSuárez Rivero, José Pablo-
crisitem.author.fullNamePlaza De La Hoz, Ángel-
crisitem.author.fullNameAbad Real, María Pilar-
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