Please use this identifier to cite or link to this item:
http://hdl.handle.net/10553/51592
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Dotor, M. L. | |
dc.contributor.author | Golmayo, D. | |
dc.contributor.author | Calle, A. | |
dc.contributor.author | Sendra, J. R. | |
dc.contributor.author | Anguita, J. V. | |
dc.contributor.author | Gonzalez, L. | |
dc.contributor.author | Gonzalez, Y. | |
dc.contributor.author | Briones, F. | |
dc.date.accessioned | 2018-11-25T02:00:02Z | - |
dc.date.available | 2018-11-25T02:00:02Z | - |
dc.date.issued | 1995 | |
dc.identifier.issn | 0927-0248 | |
dc.identifier.uri | http://hdl.handle.net/10553/51592 | - |
dc.publisher | 0927-0248 | |
dc.relation.ispartof | Solar Energy Materials and Solar Cells | |
dc.source | Solar Energy Materials and Solar Cells[ISSN 0927-0248],v. 36, p. 271-276 | |
dc.title | InP tunnel junctions grown by atomic layer molecular beam epitaxy on InP and InP-on-Si substrates | |
dc.type | info:eu-repo/semantics/article | es |
dc.type | Article | es |
dc.identifier.doi | 10.1016/0927-0248(94)00178-2 | |
dc.identifier.scopus | 0029277986 | |
dc.contributor.authorscopusid | 6701813964 | |
dc.contributor.authorscopusid | 6701814842 | |
dc.contributor.authorscopusid | 7004543420 | |
dc.contributor.authorscopusid | 7006497287 | |
dc.contributor.authorscopusid | 57202568509 | |
dc.contributor.authorscopusid | 7202219121 | |
dc.contributor.authorscopusid | 7005532678 | |
dc.contributor.authorscopusid | 7005186899 | |
dc.description.lastpage | 276 | |
dc.description.firstpage | 271 | |
dc.relation.volume | 36 | |
dc.type2 | Artículo | es |
dc.identifier.ulpgc | Sí | es |
dc.description.scie | SCIE | |
item.grantfulltext | none | - |
item.fulltext | Sin texto completo | - |
crisitem.author.dept | Departamento de Ingeniería Electrónica y Automática | - |
crisitem.author.orcid | 0000-0001-5385-792X | - |
crisitem.author.fullName | Sendra Sendra, José Ramón | - |
Appears in Collections: | Artículos |
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