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Please use this identifier to cite or link to this item: https://accedacris.ulpgc.es/jspui/handle/10553/51592
DC FieldValueLanguage
dc.contributor.authorDotor, M. L.
dc.contributor.authorGolmayo, D.
dc.contributor.authorCalle, A.
dc.contributor.authorSendra, J. R.
dc.contributor.authorAnguita, J. V.
dc.contributor.authorGonzalez, L.
dc.contributor.authorGonzalez, Y.
dc.contributor.authorBriones, F.
dc.date.accessioned2018-11-25T02:00:02Z-
dc.date.available2018-11-25T02:00:02Z-
dc.date.issued1995
dc.identifier.issn0927-0248
dc.identifier.urihttps://accedacris.ulpgc.es/handle/10553/51592-
dc.publisher0927-0248
dc.relation.ispartofSolar Energy Materials and Solar Cells
dc.sourceSolar Energy Materials and Solar Cells[ISSN 0927-0248],v. 36, p. 271-276
dc.titleInP tunnel junctions grown by atomic layer molecular beam epitaxy on InP and InP-on-Si substrates
dc.typeinfo:eu-repo/semantics/articlees
dc.typeArticlees
dc.identifier.doi10.1016/0927-0248(94)00178-2
dc.identifier.scopus0029277986
dc.contributor.authorscopusid6701813964
dc.contributor.authorscopusid6701814842
dc.contributor.authorscopusid7004543420
dc.contributor.authorscopusid7006497287
dc.contributor.authorscopusid57202568509
dc.contributor.authorscopusid7202219121
dc.contributor.authorscopusid7005532678
dc.contributor.authorscopusid7005186899
dc.description.lastpage276
dc.description.firstpage271
dc.relation.volume36
dc.type2Artículoes
dc.identifier.ulpgcSíes
dc.description.scieSCIE
item.grantfulltextnone-
item.fulltextSin texto completo-
crisitem.author.deptDepartamento de Ingeniería Electrónica y Automática-
crisitem.author.orcid0000-0001-5385-792X-
crisitem.author.fullNameSendra Sendra, José Ramón-
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