Reactive ion beam etching of aluminum indium antimonide, gallium indium antimonide heterostructures in electron cyclotron resonance methane/hydrogen/ nitrogen/silicon tetrachloride discharges at room temperature

Please use this identifier to cite or link to this item: http://hdl.handle.net/10553/51591

DC Field	Value	Language
dc.contributor.author	Sendra, J. R.
dc.contributor.author	Anguita, J.
dc.contributor.author	Pérez-Camacho, J. J.
dc.contributor.author	Briones, F.
dc.date.accessioned	2018-11-25T01:59:31Z	-
dc.date.available	2018-11-25T01:59:31Z	-
dc.date.issued	1995
dc.identifier.issn	0003-6951
dc.identifier.uri	http://hdl.handle.net/10553/51591	-
dc.publisher	0003-6951
dc.relation.ispartof	Applied physics letters
dc.source	Applied Physics Letters[ISSN 0003-6951],v. 67, p. 3289
dc.title	Reactive ion beam etching of aluminum indium antimonide, gallium indium antimonide heterostructures in electron cyclotron resonance methane/hydrogen/ nitrogen/silicon tetrachloride discharges at room temperature
dc.type	info:eu-repo/semantics/article	es
dc.type	Article	es
dc.identifier.doi	10.1063/1.115223
dc.identifier.scopus	0038895166
dc.contributor.authorscopusid	7006497287
dc.contributor.authorscopusid	57202568509
dc.contributor.authorscopusid	6602265211
dc.contributor.authorscopusid	7005186899
dc.description.lastpage	3289
dc.description.firstpage	3289
dc.relation.volume	67
dc.type2	Artículo	es
dc.identifier.ulpgc	Sí	es
dc.description.scie	SCIE
item.fulltext	Sin texto completo	-
item.grantfulltext	none	-
crisitem.author.dept	GIR IUMA: Equipos y Sistemas de Comunicación	-
crisitem.author.dept	IU de Microelectrónica Aplicada	-
crisitem.author.orcid	0000-0001-5385-792X	-
crisitem.author.parentorg	IU de Microelectrónica Aplicada	-
crisitem.author.fullName	Sendra Sendra,José Ramón	-
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