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Please use this identifier to cite or link to this item: https://accedacris.ulpgc.es/handle/10553/51591
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dc.contributor.authorSendra, J. R.
dc.contributor.authorAnguita, J.
dc.contributor.authorPérez-Camacho, J. J.
dc.contributor.authorBriones, F.
dc.date.accessioned2018-11-25T01:59:31Z-
dc.date.available2018-11-25T01:59:31Z-
dc.date.issued1995
dc.identifier.issn0003-6951
dc.identifier.urihttps://accedacris.ulpgc.es/handle/10553/51591-
dc.publisher0003-6951
dc.relation.ispartofApplied physics letters
dc.sourceApplied Physics Letters[ISSN 0003-6951],v. 67, p. 3289
dc.titleReactive ion beam etching of aluminum indium antimonide, gallium indium antimonide heterostructures in electron cyclotron resonance methane/hydrogen/ nitrogen/silicon tetrachloride discharges at room temperature
dc.typeinfo:eu-repo/semantics/articlees
dc.typeArticlees
dc.identifier.doi10.1063/1.115223
dc.identifier.scopus0038895166
dc.contributor.authorscopusid7006497287
dc.contributor.authorscopusid57202568509
dc.contributor.authorscopusid6602265211
dc.contributor.authorscopusid7005186899
dc.description.lastpage3289
dc.description.firstpage3289
dc.relation.volume67
dc.type2Artículoes
dc.identifier.ulpgcSíes
dc.description.scieSCIE
item.fulltextSin texto completo-
item.grantfulltextnone-
crisitem.author.deptDepartamento de Ingeniería Electrónica y Automática-
crisitem.author.orcid0000-0001-5385-792X-
crisitem.author.fullNameSendra Sendra, José Ramón-
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